GaN high-performance low-leakage p-Islet MPS diodes enabled by PAMBE-based selective area growth

Palash Sarker, Frank Putnam Kelly, Riley Elis Vesto, Fawad Hassan Ismail, Kyekyoon Kim

Research output: Contribution to conferencePaperpeer-review

Abstract

Two most widely used techniques to fabricate GaN p-n structures are: ion-implantation and ICP-RIE etching followed by regrowth. However, both the techniques inextricably suffer from higher leakage current due to defects and leakage paths created, while the latter introduces reduction in current density in the damaged areas. These high-defect yielding techniques can be avoided by using our PAMBE-SAG protocol developed earlier. In this paper we designed and successfully demonstrated the PI-MPS diode structures using the PAMBE-SAG methodology for the first time.

Original languageEnglish (US)
StatePublished - Jan 1 2019
Event2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019 - Minneapolis, United States
Duration: Apr 29 2019May 2 2019

Conference

Conference2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019
CountryUnited States
CityMinneapolis
Period4/29/195/2/19

Keywords

  • ICP-RIE
  • Ion-implantation
  • Leakage current
  • PAMBE-SAG
  • PI-MPS

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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