GaN high-performance low-leakage p-Islet MPS diodes enabled by PAMBE-based selective area growth

Palash Sarker; Frank Putnam Kelly; Riley Elis Vesto; Fawad Hassan Ismail; Kyekyoon Kim

GaN high-performance low-leakage p-Islet MPS diodes enabled by PAMBE-based selective area growth

Palash Sarker, Frank Putnam Kelly, Riley Elis Vesto, Fawad Hassan Ismail, Kyekyoon Kim

Research output: Contribution to conference › Paper › peer-review

Abstract

Two most widely used techniques to fabricate GaN p-n structures are: ion-implantation and ICP-RIE etching followed by regrowth. However, both the techniques inextricably suffer from higher leakage current due to defects and leakage paths created, while the latter introduces reduction in current density in the damaged areas. These high-defect yielding techniques can be avoided by using our PAMBE-SAG protocol developed earlier. In this paper we designed and successfully demonstrated the PI-MPS diode structures using the PAMBE-SAG methodology for the first time.

Original language	English (US)
State	Published - 2019
Event	2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019 - Minneapolis, United States Duration: Apr 29 2019 → May 2 2019

Conference

Conference	2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019
Country/Territory	United States
City	Minneapolis
Period	4/29/19 → 5/2/19

Keywords

ICP-RIE
Ion-implantation
Leakage current
PAMBE-SAG
PI-MPS

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

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GaN high-performance low-leakage p-Islet MPS diodes enabled by PAMBE-based selective area growth. / Sarker, Palash; Kelly, Frank Putnam; Vesto, Riley Elis et al.
2019. Paper presented at 2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019, Minneapolis, United States.

Research output: Contribution to conference › Paper › peer-review

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title = "GaN high-performance low-leakage p-Islet MPS diodes enabled by PAMBE-based selective area growth",

abstract = "Two most widely used techniques to fabricate GaN p-n structures are: ion-implantation and ICP-RIE etching followed by regrowth. However, both the techniques inextricably suffer from higher leakage current due to defects and leakage paths created, while the latter introduces reduction in current density in the damaged areas. These high-defect yielding techniques can be avoided by using our PAMBE-SAG protocol developed earlier. In this paper we designed and successfully demonstrated the PI-MPS diode structures using the PAMBE-SAG methodology for the first time.",

keywords = "ICP-RIE, Ion-implantation, Leakage current, PAMBE-SAG, PI-MPS",

author = "Palash Sarker and Kelly, {Frank Putnam} and Vesto, {Riley Elis} and Ismail, {Fawad Hassan} and Kyekyoon Kim",

note = "Funding Information: The authors would like to gratefully acknowledge the support from the Office of Naval Research (ONR Award No.: N00014-17-1-2681, Program Manager: Lynn Petersen). The microanalysis was carried out in the Center for Microanalysis of Materials of the University of Illinois at Urbana-Champaign. The devices processing was performed in the Micro and Nano Technology Laboratory of the University. Publisher Copyright: {\textcopyright} 2019 CS Mantech. All rights reserved.; 2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019 ; Conference date: 29-04-2019 Through 02-05-2019",

year = "2019",

language = "English (US)",

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T1 - GaN high-performance low-leakage p-Islet MPS diodes enabled by PAMBE-based selective area growth

AU - Sarker, Palash

AU - Kelly, Frank Putnam

AU - Vesto, Riley Elis

AU - Ismail, Fawad Hassan

AU - Kim, Kyekyoon

N1 - Funding Information: The authors would like to gratefully acknowledge the support from the Office of Naval Research (ONR Award No.: N00014-17-1-2681, Program Manager: Lynn Petersen). The microanalysis was carried out in the Center for Microanalysis of Materials of the University of Illinois at Urbana-Champaign. The devices processing was performed in the Micro and Nano Technology Laboratory of the University. Publisher Copyright: © 2019 CS Mantech. All rights reserved.

PY - 2019

Y1 - 2019

N2 - Two most widely used techniques to fabricate GaN p-n structures are: ion-implantation and ICP-RIE etching followed by regrowth. However, both the techniques inextricably suffer from higher leakage current due to defects and leakage paths created, while the latter introduces reduction in current density in the damaged areas. These high-defect yielding techniques can be avoided by using our PAMBE-SAG protocol developed earlier. In this paper we designed and successfully demonstrated the PI-MPS diode structures using the PAMBE-SAG methodology for the first time.

AB - Two most widely used techniques to fabricate GaN p-n structures are: ion-implantation and ICP-RIE etching followed by regrowth. However, both the techniques inextricably suffer from higher leakage current due to defects and leakage paths created, while the latter introduces reduction in current density in the damaged areas. These high-defect yielding techniques can be avoided by using our PAMBE-SAG protocol developed earlier. In this paper we designed and successfully demonstrated the PI-MPS diode structures using the PAMBE-SAG methodology for the first time.

KW - ICP-RIE

KW - Ion-implantation

KW - Leakage current

KW - PAMBE-SAG

KW - PI-MPS

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M3 - Paper

AN - SCOPUS:85067014907

T2 - 2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019

Y2 - 29 April 2019 through 2 May 2019

ER -

GaN high-performance low-leakage p-Islet MPS diodes enabled by PAMBE-based selective area growth

Abstract

Conference

Keywords

ASJC Scopus subject areas

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