GaN grown on hydrogen plasma cleaned 6H-SiC substrates

Keyphrases

• Molecular Beam Epitaxy 100%
• Substrate Surface 100%
• 6H-SiC Wafer 100%
• SiC Substrate 100%
• Hydrogen Plasma 100%
• Limit of Detection 50%
• Diffraction 50%
• Photoluminescence 50%
• Passivated 50%
• Photoemission 50%
• Preparation Method 50%
• GaN Layers 50%
• AlN Buffer Layer 50%
• Epitaxial GaN 50%
• Kikuchi Patterns 50%
• Plasma Enhanced 50%
• 6H-SiC 50%
• High-temperature Processing 50%
• GaN Epilayer 50%
• Substrate Preparation 50%
• Growth Chamber 50%
• Carbon Bonding 50%

Engineering

• Substrate Surface 100%
• Detection Limit 50%
• Ray Diffraction 50%
• Buffer Layer 50%
• Photoemission 50%
• Kikuchi Line 50%

Material Science

• Molecular Beam Epitaxy 100%
• Buffer Layer 50%
• Photoluminescence 50%
• Aluminum Nitride 50%
• Epilayers 50%