The evolution of the topography of GaN stripes as a function of stripe width (2-120 μm), fill factor and substrate smoothness has been explored. The spatially resolved optical properties of these structures have been characterized by cathodoluminescence imaging and line scans. Implications from the optical study have been discussed.
|Original language||English (US)|
|Journal||MRS Internet Journal of Nitride Semiconductor Research|
|Issue number||SUPPL. 1|
|State||Published - 1999|
ASJC Scopus subject areas
- Materials Science(all)