GaN: From selective area to epitaxial lateral overgrowth

X. Li; S. G. Bishop; J. J. Coleman

doi:10.1557/s109257830000291x

GaN: From selective area to epitaxial lateral overgrowth

X. Li, S. G. Bishop, J. J. Coleman

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The evolution of the topography of GaN stripes as a function of stripe width (2-120 μm), fill factor and substrate smoothness has been explored. The spatially resolved optical properties of these structures have been characterized by cathodoluminescence imaging and line scans. Implications from the optical study have been discussed.

Original language	English (US)
Pages (from-to)	6d
Journal	MRS Internet Journal of Nitride Semiconductor Research
Volume	4
Issue number	SUPPL. 1
DOIs	https://doi.org/10.1557/s109257830000291x
State	Published - 1999

ASJC Scopus subject areas

General Materials Science

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10.1557/s109257830000291x

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@article{3b64f0b67aa2481bb71837c671630fd5,

title = "GaN: From selective area to epitaxial lateral overgrowth",

abstract = "The evolution of the topography of GaN stripes as a function of stripe width (2-120 μm), fill factor and substrate smoothness has been explored. The spatially resolved optical properties of these structures have been characterized by cathodoluminescence imaging and line scans. Implications from the optical study have been discussed.",

author = "X. Li and Bishop, {S. G.} and Coleman, {J. J.}",

year = "1999",

doi = "10.1557/s109257830000291x",

language = "English (US)",

volume = "4",

pages = "6d",

journal = "MRS Internet Journal of Nitride Semiconductor Research",

issn = "1092-5783",

publisher = "Materials Research Society",

number = "SUPPL. 1",

}

TY - JOUR

T1 - GaN

T2 - From selective area to epitaxial lateral overgrowth

AU - Li, X.

AU - Bishop, S. G.

AU - Coleman, J. J.

PY - 1999

Y1 - 1999

N2 - The evolution of the topography of GaN stripes as a function of stripe width (2-120 μm), fill factor and substrate smoothness has been explored. The spatially resolved optical properties of these structures have been characterized by cathodoluminescence imaging and line scans. Implications from the optical study have been discussed.

AB - The evolution of the topography of GaN stripes as a function of stripe width (2-120 μm), fill factor and substrate smoothness has been explored. The spatially resolved optical properties of these structures have been characterized by cathodoluminescence imaging and line scans. Implications from the optical study have been discussed.

UR - http://www.scopus.com/inward/record.url?scp=3442900328&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3442900328&partnerID=8YFLogxK

U2 - 10.1557/s109257830000291x

DO - 10.1557/s109257830000291x

M3 - Article

AN - SCOPUS:3442900328

SN - 1092-5783

VL - 4

SP - 6d

JO - MRS Internet Journal of Nitride Semiconductor Research

JF - MRS Internet Journal of Nitride Semiconductor Research

IS - SUPPL. 1

ER -

GaN: From selective area to epitaxial lateral overgrowth

Abstract

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