GaN: From selective area to epitaxial lateral overgrowth

Xiuling Li, S. G. Bishop, J. J. Coleman

Research output: Contribution to journalArticle

Abstract

The evolution of the topography of GaN stripes as a function of stripe width (2-120 μm), fill factor and substrate smoothness has been explored. The spatially resolved optical properties of these structures have been characterized by cathodoluminescence imaging and line scans. Implications from the optical study have been discussed.

Original languageEnglish (US)
JournalMRS Internet Journal of Nitride Semiconductor Research
Volume4
Issue numberSUPPL. 1
StatePublished - Dec 1 1999

ASJC Scopus subject areas

  • Materials Science(all)

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