Abstract
The evolution of the topography of GaN stripes as a function of stripe width (2 - 120 μm), fill factor and substrate smoothness has been explored. The spatially resolved optical properties of these structures have been characterized by cathodoluminescence imaging and line scans. Implications from the optical study have been discussed.
| Original language | English (US) |
|---|---|
| Pages (from-to) | G4.8 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 537 |
| State | Published - 1999 |
| Event | Proceedings of the 1998 MRS Fall Meeting - Symposium on 'GaN and Related Alloys' - Boston, MA, USA Duration: Nov 30 1998 → Dec 4 1998 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering