GaN: from selective area to epitaxial lateral overgrowth

Xiuling Li, S. G. Bishop, J. J. Coleman

Research output: Contribution to journalConference article

Abstract

The evolution of the topography of GaN stripes as a function of stripe width (2 - 120 μm), fill factor and substrate smoothness has been explored. The spatially resolved optical properties of these structures have been characterized by cathodoluminescence imaging and line scans. Implications from the optical study have been discussed.

Original languageEnglish (US)
JournalMaterials Research Society Symposium - Proceedings
Volume537
StatePublished - Dec 1 1999
EventProceedings of the 1998 MRS Fall Meeting - Symposium on 'GaN and Related Alloys' - Boston, MA, USA
Duration: Nov 30 1998Dec 4 1998

Fingerprint

Cathodoluminescence
cathodoluminescence
Topography
topography
Optical properties
Imaging techniques
optical properties
Substrates

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

GaN : from selective area to epitaxial lateral overgrowth. / Li, Xiuling; Bishop, S. G.; Coleman, J. J.

In: Materials Research Society Symposium - Proceedings, Vol. 537, 01.12.1999.

Research output: Contribution to journalConference article

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AB - The evolution of the topography of GaN stripes as a function of stripe width (2 - 120 μm), fill factor and substrate smoothness has been explored. The spatially resolved optical properties of these structures have been characterized by cathodoluminescence imaging and line scans. Implications from the optical study have been discussed.

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