GaN epitaxial lateral overgrowth and optical characterization

Xiuling Li, S. G. Bishop, J. J. Coleman

Research output: Contribution to journalArticle

Abstract

We demonstrate the epitaxial lateral overgrowth (ELO) of GaN from narrow stripes with triangular cross sections by atmospheric pressure metal organic chemical vapor deposition, and characterize the optical properties of these stripes at each stage of the growth using spatially resolved cathodoluminescence spectroscopy, wavelength imaging, and line scans. An improvement of the optical quality of the GaN materials grown by the ELO technique is clearly shown by the appearance of a free exciton peak, the enhancement of bandedge emission, and the weakening of the yellow emission.

Original languageEnglish (US)
Pages (from-to)1179-1181
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number9
DOIs
StatePublished - Dec 1 1998

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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