GaN electronics with high electron mobility transistors

I. Adesida, V. Kumar, J. W. Lee, A. Kuliev, R. Schwindt, W. Lanford

Research output: Contribution to conferencePaperpeer-review

Abstract

The III-nitrides AlN, GaN, and InN alloys are expected to be basis of a strong development of a novel family of semiconductor devices, for optoelectronics as well as for electronics. GaN-based high electron mobility transistors (HEMTs) have shown superior power handling and operating temperatures at frequency ranges that are beyond the limits of devices fabricated from Si and other III-V materials. This paper presents the state-of-the-art GaN HEMT technology and describes the potentials for the future.

Original languageEnglish (US)
Pages89-96
Number of pages8
StatePublished - Jul 28 2004
EventProceedings - 2004 24th International Conference on Microelectronics, MIEL 2004 - Nis
Duration: May 16 2004May 19 2004

Conference

ConferenceProceedings - 2004 24th International Conference on Microelectronics, MIEL 2004
CityNis
Period5/16/045/19/04

ASJC Scopus subject areas

  • Engineering(all)

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