GaN avalanche photodiodes grown on m-plane freestanding GaN substrate

Z. Vashaei, E. Cicek, C. Bayram, R. McClintock, M. Razeghi

Research output: Contribution to journalArticlepeer-review


M-plane GaN avalanche p-i-n photodiodes on low dislocation density freestanding m-plane GaN substrates were realized using metal-organic chemical vapor deposition. High quality homoepitaxial m-plane GaN layers were developed; the root-mean-square surface roughness was less than 1 Å and the full-width-at-half-maximum value of the X-ray rocking curve for (1010) diffraction of m-plane GaN epilayer was 32 arcsec. High quality material led to a low reverse-bias dark current of 8.11 pA for 225 μ m2 mesa photodetectors prior to avalanche breakdown, with the maximum multiplication gain reaching about 8000.

Original languageEnglish (US)
Article number201908
JournalApplied Physics Letters
Issue number20
StatePublished - May 17 2010
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'GaN avalanche photodiodes grown on m-plane freestanding GaN substrate'. Together they form a unique fingerprint.

Cite this