GaInNAsSb/GaAs vertical cavity surface emitting lasers at 1534 nm

M. A. Wistey; S. R. Bank; H. P. Bae; H. B. Yuen; E. R. Pickett; L. L. Goddard; J. S. Harris

doi:10.1049/el:20064455

GaInNAsSb/GaAs vertical cavity surface emitting lasers at 1534 nm

M. A. Wistey, S. R. Bank, H. P. Bae, H. B. Yuen, E. R. Pickett, L. L. Goddard, J. S. Harris

Research output: Contribution to journal › Article › peer-review

Abstract

Electrically pumped, C-band vertical cavity surface emitting lasers (VCSELs) grown on GaAs are reported for the first time. The VCSELs employed three GaInNAsSb quantum wells separated by GaNAs barriers. Pulsed lasing was observed at 1534 nm, in the ITU C-band, when cooled. These lasers exhibit the longest wavelength reported to date for electrically pumped VCSELs grown on GaAs substrates.

Original language	English (US)
Pages (from-to)	282-283
Number of pages	2
Journal	Electronics Letters
Volume	42
Issue number	5
DOIs	https://doi.org/10.1049/el:20064455
State	Published - Mar 2 2006
Externally published	Yes

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Electrical and Electronic Engineering

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10.1049/el:20064455

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title = "GaInNAsSb/GaAs vertical cavity surface emitting lasers at 1534 nm",

abstract = "Electrically pumped, C-band vertical cavity surface emitting lasers (VCSELs) grown on GaAs are reported for the first time. The VCSELs employed three GaInNAsSb quantum wells separated by GaNAs barriers. Pulsed lasing was observed at 1534 nm, in the ITU C-band, when cooled. These lasers exhibit the longest wavelength reported to date for electrically pumped VCSELs grown on GaAs substrates.",

author = "Wistey, {M. A.} and Bank, {S. R.} and Bae, {H. P.} and Yuen, {H. B.} and Pickett, {E. R.} and Goddard, {L. L.} and Harris, {J. S.}",

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doi = "10.1049/el:20064455",

language = "English (US)",

volume = "42",

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journal = "Electronics Letters",

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T1 - GaInNAsSb/GaAs vertical cavity surface emitting lasers at 1534 nm

AU - Wistey, M. A.

AU - Bank, S. R.

AU - Bae, H. P.

AU - Yuen, H. B.

AU - Pickett, E. R.

AU - Goddard, L. L.

AU - Harris, J. S.

PY - 2006/3/2

Y1 - 2006/3/2

N2 - Electrically pumped, C-band vertical cavity surface emitting lasers (VCSELs) grown on GaAs are reported for the first time. The VCSELs employed three GaInNAsSb quantum wells separated by GaNAs barriers. Pulsed lasing was observed at 1534 nm, in the ITU C-band, when cooled. These lasers exhibit the longest wavelength reported to date for electrically pumped VCSELs grown on GaAs substrates.

AB - Electrically pumped, C-band vertical cavity surface emitting lasers (VCSELs) grown on GaAs are reported for the first time. The VCSELs employed three GaInNAsSb quantum wells separated by GaNAs barriers. Pulsed lasing was observed at 1534 nm, in the ITU C-band, when cooled. These lasers exhibit the longest wavelength reported to date for electrically pumped VCSELs grown on GaAs substrates.

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JO - Electronics Letters

JF - Electronics Letters

IS - 5

ER -

GaInNAsSb/GaAs vertical cavity surface emitting lasers at 1534 nm

Abstract

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