GaInNAsSb/GaAs vertical cavity surface emitting lasers at 1534 nm

M. A. Wistey, S. R. Bank, H. P. Bae, H. B. Yuen, E. R. Pickett, L. L. Goddard, J. S. Harris

Research output: Contribution to journalArticle

Abstract

Electrically pumped, C-band vertical cavity surface emitting lasers (VCSELs) grown on GaAs are reported for the first time. The VCSELs employed three GaInNAsSb quantum wells separated by GaNAs barriers. Pulsed lasing was observed at 1534 nm, in the ITU C-band, when cooled. These lasers exhibit the longest wavelength reported to date for electrically pumped VCSELs grown on GaAs substrates.

Original languageEnglish (US)
Pages (from-to)282-283
Number of pages2
JournalElectronics Letters
Volume42
Issue number5
DOIs
StatePublished - Mar 2 2006
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Wistey, M. A., Bank, S. R., Bae, H. P., Yuen, H. B., Pickett, E. R., Goddard, L. L., & Harris, J. S. (2006). GaInNAsSb/GaAs vertical cavity surface emitting lasers at 1534 nm. Electronics Letters, 42(5), 282-283. https://doi.org/10.1049/el:20064455