We report the characteristics of electrically injected visible vertical cavity surface emitting lasers (VCSELs) operating over a wide rang eof wavelengths, from 643 to 664 nm. The devices are grown on (311) A substrates, and consist of an 8-wave thick AlGaInP strained quantum well optical cavity active region surrounded by AlAs/Al0.5Ga0.5As distributed Bragg reflector (DBRs). Pulsed room temperature lasing is obtained, for the first time, at the n=1 (664 nm) quantum well transition. Shorter wavelength (643 ≤λ°<660) operation has also been obtained, due to gain contributions from the n=2 state. For the presentation, we will elaborate on the aspects of quantum well gain and device design, and discuss our progress in reducing the cavity losses and threshold current.