@inproceedings{35a662c6eec14b2c9017dad9525c8353,
title = "Gain characteristics of red AlGaInP VCSELs",
abstract = "We report the characteristics of electrically injected visible vertical cavity surface emitting lasers (VCSELs) operating over a wide rang eof wavelengths, from 643 to 664 nm. The devices are grown on (311) A substrates, and consist of an 8-wave thick AlGaInP strained quantum well optical cavity active region surrounded by AlAs/Al0.5Ga0.5As distributed Bragg reflector (DBRs). Pulsed room temperature lasing is obtained, for the first time, at the n=1 (664 nm) quantum well transition. Shorter wavelength (643 ≤λ°<660) operation has also been obtained, due to gain contributions from the n=2 state. For the presentation, we will elaborate on the aspects of quantum well gain and device design, and discuss our progress in reducing the cavity losses and threshold current.",
author = "Lott, {J. A.} and Scheneider, {R. P.} and Zolper, {J. C.} and Choquette, {K. D.} and Malloy, {K. J.}",
year = "1993",
language = "English (US)",
isbn = "0780312635",
series = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting",
publisher = "Publ by IEEE",
pages = "611--612",
booktitle = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting",
note = "Annual Meeting of the IEEE Lasers and Electro-Optics Society ; Conference date: 15-11-1993 Through 18-11-1993",
}