GaAsP/Si solar cells and tunnel junctions for III-V/Si tandem devices

Michelle Vaisman, Kevin Nay Yaung, Yukun Sun, Minjoo L. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution


The field of III-V integration onto Si for high-efficiency, low-cost tandem photovoltaics has advanced rapidly in recent years. While silicon technology is quite mature, GaAsP solar cells have exhibited relatively low efficiencies <10%. In this work, we investigated the effect of temperature on the metamorphic growth of single-junction 1.7 eV GaAsP/GaP/Si solar cells, yielding improvements in solar cell TDD down to 5-6×106 cm-2. Our devices yield efficiencies of 11% without anti-reflection coatings. We additionally investigated the use of Si δ-doping to improve the thermal stability of tunnel junction interconnects. The combination of improved solar cell efficiency and tunnel junction stability is promising for III-V/Si tandem cell development.

Original languageEnglish (US)
Title of host publication2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages5
ISBN (Electronic)9781509027248
StatePublished - Nov 18 2016
Externally publishedYes
Event43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States
Duration: Jun 5 2016Jun 10 2016

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371


Other43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/TerritoryUnited States


  • GaAsP
  • III-V on silicon
  • III-V semiconductor materials
  • metamorphic materials
  • photovoltaic cell
  • solar energy

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering


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