@inproceedings{fe303f3b1273413791f19925d87baeec,
title = "GaAsP/Si solar cells and tunnel junctions for III-V/Si tandem devices",
abstract = "The field of III-V integration onto Si for high-efficiency, low-cost tandem photovoltaics has advanced rapidly in recent years. While silicon technology is quite mature, GaAsP solar cells have exhibited relatively low efficiencies <10%. In this work, we investigated the effect of temperature on the metamorphic growth of single-junction 1.7 eV GaAsP/GaP/Si solar cells, yielding improvements in solar cell TDD down to 5-6×106 cm-2. Our devices yield efficiencies of 11% without anti-reflection coatings. We additionally investigated the use of Si δ-doping to improve the thermal stability of tunnel junction interconnects. The combination of improved solar cell efficiency and tunnel junction stability is promising for III-V/Si tandem cell development.",
keywords = "GaAsP, III-V on silicon, III-V semiconductor materials, metamorphic materials, photovoltaic cell, solar energy",
author = "Michelle Vaisman and Yaung, {Kevin Nay} and Yukun Sun and Lee, {Minjoo L.}",
note = "Funding Information: M.V. was supported by a NASA Space Technology Research Fellowship. K.N.Y. was supported by the Singapore Energy Innovation Programme Office for a National Research Foundation graduate fellowship. We also acknowledge funding from the NSF CAREER program (Grant No. DMR 09559616), NSF CBET (Grant No. 1509687), and the use a facilities supported by NSF MRSEC DMR 1119826 Publisher Copyright: {\textcopyright} 2016 IEEE.; 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 ; Conference date: 05-06-2016 Through 10-06-2016",
year = "2016",
month = nov,
day = "18",
doi = "10.1109/PVSC.2016.7749988",
language = "English (US)",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "2043--2047",
booktitle = "2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016",
address = "United States",
}