GaAsP solar cells on GaP/Si with low threading dislocation density

Kevin Nay Yaung, Michelle Vaisman, Jordan Lang, Minjoo Larry Lee

Research output: Contribution to journalArticlepeer-review

Abstract

GaAsP on Si tandem cells represent a promising path towards achieving high efficiency while leveraging the Si solar knowledge base and low-cost infrastructure. However, dislocation densities exceeding 108 cm-2 in GaAsP cells on Si have historically hampered the efficiency of such approaches. Here, we report the achievement of low threading dislocation density values of 4.0-4.6 × 106 cm-2 in GaAsP solar cells on GaP/Si, comparable with more established metamorphic solar cells on GaAs. Our GaAsP solar cells on GaP/Si exhibit high open-circuit voltage and quantum efficiency, allowing them to significantly surpass the power conversion efficiency of previous devices. The results in this work show a realistic path towards dual-junction GaAsP on Si cells with efficiencies exceeding 30%.

Original languageEnglish (US)
Article number032107
JournalApplied Physics Letters
Volume109
Issue number3
DOIs
StatePublished - Jul 18 2016

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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