GaAsP solar cells on GaP/Si with low threading dislocation density

Kevin Nay Yaung; Michelle Vaisman; Jordan Lang; Minjoo Larry Lee

doi:10.1063/1.4959825

GaAsP solar cells on GaP/Si with low threading dislocation density

Kevin Nay Yaung, Michelle Vaisman, Jordan Lang, Minjoo Larry Lee

Research output: Contribution to journal › Article › peer-review

Abstract

GaAsP on Si tandem cells represent a promising path towards achieving high efficiency while leveraging the Si solar knowledge base and low-cost infrastructure. However, dislocation densities exceeding 10⁸ cm^-2 in GaAsP cells on Si have historically hampered the efficiency of such approaches. Here, we report the achievement of low threading dislocation density values of 4.0-4.6 × 10⁶ cm^-2 in GaAsP solar cells on GaP/Si, comparable with more established metamorphic solar cells on GaAs. Our GaAsP solar cells on GaP/Si exhibit high open-circuit voltage and quantum efficiency, allowing them to significantly surpass the power conversion efficiency of previous devices. The results in this work show a realistic path towards dual-junction GaAsP on Si cells with efficiencies exceeding 30%.

Original language	English (US)
Article number	032107
Journal	Applied Physics Letters
Volume	109
Issue number	3
DOIs	https://doi.org/10.1063/1.4959825
State	Published - Jul 18 2016

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4959825

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title = "GaAsP solar cells on GaP/Si with low threading dislocation density",

abstract = "GaAsP on Si tandem cells represent a promising path towards achieving high efficiency while leveraging the Si solar knowledge base and low-cost infrastructure. However, dislocation densities exceeding 108 cm-2 in GaAsP cells on Si have historically hampered the efficiency of such approaches. Here, we report the achievement of low threading dislocation density values of 4.0-4.6 × 106 cm-2 in GaAsP solar cells on GaP/Si, comparable with more established metamorphic solar cells on GaAs. Our GaAsP solar cells on GaP/Si exhibit high open-circuit voltage and quantum efficiency, allowing them to significantly surpass the power conversion efficiency of previous devices. The results in this work show a realistic path towards dual-junction GaAsP on Si cells with efficiencies exceeding 30%.",

author = "Yaung, {Kevin Nay} and Michelle Vaisman and Jordan Lang and Lee, {Minjoo Larry}",

note = "Funding Information: We gratefully acknowledge funding from NSF CBET (Award No. 1509687) and the NSF CAREER program (Award No. DMR-0955916). K.N.Y. was supported by the Singapore Energy Innovation Programme Office for a National Research Foundation graduate fellowship, and M.V. was supported by a National Aeronautics and Space Administration (NASA) Space Technology Research Fellowship. J.R.L. was supported by a postdoctoral fellowship from the Yale Climate and Energy Institute. Microscopy and XRD facilities used in this work were supported by the Yale Institute for Nanoscience and Quantum Engineering and National Science Foundation MRSEC DMR 1119826. Publisher Copyright: {\textcopyright} 2016 Author(s).",

year = "2016",

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doi = "10.1063/1.4959825",

language = "English (US)",

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journal = "Applied Physics Letters",

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AU - Yaung, Kevin Nay

AU - Vaisman, Michelle

AU - Lang, Jordan

AU - Lee, Minjoo Larry

N1 - Funding Information: We gratefully acknowledge funding from NSF CBET (Award No. 1509687) and the NSF CAREER program (Award No. DMR-0955916). K.N.Y. was supported by the Singapore Energy Innovation Programme Office for a National Research Foundation graduate fellowship, and M.V. was supported by a National Aeronautics and Space Administration (NASA) Space Technology Research Fellowship. J.R.L. was supported by a postdoctoral fellowship from the Yale Climate and Energy Institute. Microscopy and XRD facilities used in this work were supported by the Yale Institute for Nanoscience and Quantum Engineering and National Science Foundation MRSEC DMR 1119826. Publisher Copyright: © 2016 Author(s).

PY - 2016/7/18

Y1 - 2016/7/18

N2 - GaAsP on Si tandem cells represent a promising path towards achieving high efficiency while leveraging the Si solar knowledge base and low-cost infrastructure. However, dislocation densities exceeding 108 cm-2 in GaAsP cells on Si have historically hampered the efficiency of such approaches. Here, we report the achievement of low threading dislocation density values of 4.0-4.6 × 106 cm-2 in GaAsP solar cells on GaP/Si, comparable with more established metamorphic solar cells on GaAs. Our GaAsP solar cells on GaP/Si exhibit high open-circuit voltage and quantum efficiency, allowing them to significantly surpass the power conversion efficiency of previous devices. The results in this work show a realistic path towards dual-junction GaAsP on Si cells with efficiencies exceeding 30%.

AB - GaAsP on Si tandem cells represent a promising path towards achieving high efficiency while leveraging the Si solar knowledge base and low-cost infrastructure. However, dislocation densities exceeding 108 cm-2 in GaAsP cells on Si have historically hampered the efficiency of such approaches. Here, we report the achievement of low threading dislocation density values of 4.0-4.6 × 106 cm-2 in GaAsP solar cells on GaP/Si, comparable with more established metamorphic solar cells on GaAs. Our GaAsP solar cells on GaP/Si exhibit high open-circuit voltage and quantum efficiency, allowing them to significantly surpass the power conversion efficiency of previous devices. The results in this work show a realistic path towards dual-junction GaAsP on Si cells with efficiencies exceeding 30%.

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GaAsP solar cells on GaP/Si with low threading dislocation density

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