GaAs surface reconstruction obtained using a dry process

Keyphrases

• Annealing 100%
• Drying Process 100%
• Epilayer 100%
• Surface Reconstruction 100%
• GaAs Surface 100%
• Substrate Interface 100%
• Low Temperature 50%
• Secondary Ion Mass Spectrometry 50%
• Ultra-high Vacuum 50%
• Molecular Beam Epitaxy 50%
• Transmission Electron Microscopy 50%
• Oxides 50%
• Overpressure 50%
• Structural Order 50%
• Native Oxide 50%
• Reconstructed Surface 50%
• GaAs Substrate 50%
• Preparation Method 50%
• Impurity Concentration 50%
• Complete Removal 50%
• Electron Cyclotron Resonance 50%
• Sublimation Temperature 50%
• Epitaxial Overgrowth 50%
• Hydrogen Plasma Treatment 50%
• Dislocation Defect 50%
• Mass Transmission 50%

Material Science

• Oxide Compound 100%
• Gallium Arsenide 100%
• Epilayers 100%
• Surface Reconstruction 100%
• Secondary Ion Mass Spectrometry 50%
• Molecular Beam Epitaxy 50%
• Transmission Electron Microscopy 50%