GaAs quantum-well infrared detectors grown on 3-inch GaAs and silicon substrates

Deepak K. Sengupta, T. Horton, Peter J. Apostolakis, Cynthia A. Rowe, P. J. Mares, M. Feng, Gregory E. Stillman, M. Dodd, S. L. Cooper, Wen I. Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents the preliminary analysis of quantum-well IR detectors grown on both GaAs and Si substrates.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherPubl by Society of Photo-Optical Instrumentation Engineers
Pages208-216
Number of pages9
ISBN (Print)0819409081, 9780819409089
DOIs
StatePublished - 1992
EventInfrared Detectors: State of the Art - San Diego, CA, USA
Duration: Jul 19 1992Jul 19 1992

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume1735
ISSN (Print)0277-786X

Other

OtherInfrared Detectors: State of the Art
CitySan Diego, CA, USA
Period7/19/927/19/92

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Sengupta, D. K., Horton, T., Apostolakis, P. J., Rowe, C. A., Mares, P. J., Feng, M., Stillman, G. E., Dodd, M., Cooper, S. L., & Wang, W. I. (1992). GaAs quantum-well infrared detectors grown on 3-inch GaAs and silicon substrates. In Proceedings of SPIE - The International Society for Optical Engineering (pp. 208-216). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 1735). Publ by Society of Photo-Optical Instrumentation Engineers. https://doi.org/10.1117/12.138626