GaAs MESFET's Made by Ion Implantation into MOCVD Buffer Layers

M. Feng, V. K. Eu, T. Zielinski, H. Kanber, W. B. Henderson

Research output: Contribution to journalArticlepeer-review

Abstract

Low-noise GaAs metal-semiconductor field-effect transistors (MESFET's) have been made using ion-implanted metal organic chemical vapor deposition (MOCVD) buffer layers. A noise figure of 1.46 dB with 10.20 associated gain has been achieved at 12 GHz for a 0.5-μm gatelength by 300-μm gatewidth FET device. This result demonstrates that excellent GaAs LNFET's can be made by ion implantation into MOCVD buffer layers, comparable to the best results obtained from similar devices made by AsCl3 vapor-phase epitaxy and molecular-beam epitaxy.

Original languageEnglish (US)
Pages (from-to)18-20
Number of pages3
JournalIEEE Electron Device Letters
Volume5
Issue number1
DOIs
StatePublished - Jan 1984
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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