Low-noise GaAs metal-semiconductor field-effect transistors (MESFET's) have been made using ion-implanted metal organic chemical vapor deposition (MOCVD) buffer layers. A noise figure of 1.46 dB with 10.20 associated gain has been achieved at 12 GHz for a 0.5-μm gatelength by 300-μm gatewidth FET device. This result demonstrates that excellent GaAs LNFET's can be made by ion implantation into MOCVD buffer layers, comparable to the best results obtained from similar devices made by AsCl3 vapor-phase epitaxy and molecular-beam epitaxy.
|Original language||English (US)|
|Number of pages||3|
|Journal||IEEE Electron Device Letters|
|State||Published - Jan 1984|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering