We demonstrate the first metal-semiconductor fieldeffect transistor with a self-assembled planar 〈110〉 GaAs nanowire channel. Well-defined dc output and transfer characteristics have been observed with a subthreshold slope of ∼150 mV/dec, maximum gm of 23 mS/mm, and excellent on-current saturation. Bulklike mobility of ∼4100 cm2/V · s with corresponding electron concentration of 2.3 · 1017 cm-3 is derived by fitting the experimental data using a self-consistent long channel field effect device model.
- Charge carrier mobility
- Field-effect transistors (FETs)
- Semiconductor materials
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials