GaAs MESFET with a high-mobility self-assembled planar nanowire channel

Seth A. Fortuna; Xiuling Li

doi:10.1109/LED.2009.2019769

GaAs MESFET with a high-mobility self-assembled planar nanowire channel

Seth A. Fortuna, Xiuling Li

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We demonstrate the first metal-semiconductor fieldeffect transistor with a self-assembled planar 〈110〉 GaAs nanowire channel. Well-defined dc output and transfer characteristics have been observed with a subthreshold slope of ∼150 mV/dec, maximum _gm of 23 mS/mm, and excellent on-current saturation. Bulklike mobility of ∼4100 cm2/V · s with corresponding electron concentration of 2.3 · 1017 cm_-3 is derived by fitting the experimental data using a self-consistent long channel field effect device model.

Original language	English (US)
Pages (from-to)	593-595
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	6
DOIs	https://doi.org/10.1109/LED.2009.2019769
State	Published - 2009

Keywords

Charge carrier mobility
Field-effect transistors (FETs)
Nanotechnology
Semiconductor materials

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Online availability

10.1109/LED.2009.2019769

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title = "GaAs MESFET with a high-mobility self-assembled planar nanowire channel",

abstract = "We demonstrate the first metal-semiconductor fieldeffect transistor with a self-assembled planar 〈110〉 GaAs nanowire channel. Well-defined dc output and transfer characteristics have been observed with a subthreshold slope of ∼150 mV/dec, maximum gm of 23 mS/mm, and excellent on-current saturation. Bulklike mobility of ∼4100 cm2/V · s with corresponding electron concentration of 2.3 · 1017 cm-3 is derived by fitting the experimental data using a self-consistent long channel field effect device model.",

keywords = "Charge carrier mobility, Field-effect transistors (FETs), Nanotechnology, Semiconductor materials",

author = "Fortuna, {Seth A.} and Xiuling Li",

note = "Funding Information: Manuscript received February 18, 2009; revised March 10, 2009. First published May 5, 2009; current version published May 27, 2009. This work was supported by the National Science Foundation under Grant ECCS 07-47178. The review of this letter was arranged by Editor J. A. del Alamo.",

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AU - Fortuna, Seth A.

AU - Li, Xiuling

N1 - Funding Information: Manuscript received February 18, 2009; revised March 10, 2009. First published May 5, 2009; current version published May 27, 2009. This work was supported by the National Science Foundation under Grant ECCS 07-47178. The review of this letter was arranged by Editor J. A. del Alamo.

PY - 2009

Y1 - 2009

N2 - We demonstrate the first metal-semiconductor fieldeffect transistor with a self-assembled planar 〈110〉 GaAs nanowire channel. Well-defined dc output and transfer characteristics have been observed with a subthreshold slope of ∼150 mV/dec, maximum gm of 23 mS/mm, and excellent on-current saturation. Bulklike mobility of ∼4100 cm2/V · s with corresponding electron concentration of 2.3 · 1017 cm-3 is derived by fitting the experimental data using a self-consistent long channel field effect device model.

AB - We demonstrate the first metal-semiconductor fieldeffect transistor with a self-assembled planar 〈110〉 GaAs nanowire channel. Well-defined dc output and transfer characteristics have been observed with a subthreshold slope of ∼150 mV/dec, maximum gm of 23 mS/mm, and excellent on-current saturation. Bulklike mobility of ∼4100 cm2/V · s with corresponding electron concentration of 2.3 · 1017 cm-3 is derived by fitting the experimental data using a self-consistent long channel field effect device model.

KW - Charge carrier mobility

KW - Field-effect transistors (FETs)

KW - Nanotechnology

KW - Semiconductor materials

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GaAs MESFET with a high-mobility self-assembled planar nanowire channel

Abstract

Keywords

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