Abstract

We demonstrate the first metal-semiconductor fieldeffect transistor with a self-assembled planar 〈110〉 GaAs nanowire channel. Well-defined dc output and transfer characteristics have been observed with a subthreshold slope of ∼150 mV/dec, maximum gm of 23 mS/mm, and excellent on-current saturation. Bulklike mobility of ∼4100 cm2/V · s with corresponding electron concentration of 2.3 · 1017 cm-3 is derived by fitting the experimental data using a self-consistent long channel field effect device model.

Original languageEnglish (US)
Pages (from-to)593-595
Number of pages3
JournalIEEE Electron Device Letters
Volume30
Issue number6
DOIs
StatePublished - 2009

Keywords

  • Charge carrier mobility
  • Field-effect transistors (FETs)
  • Nanotechnology
  • Semiconductor materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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