GaAs FET with a high mobility self-assembled planar nanowire channel on a (100) substrate

Seth A. Fortuna, Xiuling Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate for the first time, a metal-semiconductor field-effect transistor (MESFET) fabricated with a self-assembled and high mobility <110> GaAs planar nanowire (NW) channel. The planar NWs were grown on GaAs (100) substrates with metalorganic chemical vapor deposition (MOCVD) through gold (Au) catalyzed vapor-liquid-solid (VLS) mechanism [1]. Unlike conventional out-of-plane <111> NWs, these <110> planar NWs grow self-aligned in the [0-11] or [01-1] directions laterally and epitaxially on the surface and stay effectively "pinned" to the (100) substrate during growth, as illustrated in Fig. la-b. They are also free of twin-defects that are often found in conventional <111> III-V NWs. In addition, they can also be transfer-printed to other substrates such as Si using a smart release scheme and standard contact printing [1]. All of these naturally make the planar NWs integratable and compatible with existing circuit design and process technology.

Original languageEnglish (US)
Title of host publication67th Device Research Conference, DRC 2009
Pages19-20
Number of pages2
DOIs
StatePublished - Dec 11 2009
Event67th Device Research Conference, DRC 2009 - University Park, PA, United States
Duration: Jun 22 2009Jun 24 2009

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other67th Device Research Conference, DRC 2009
CountryUnited States
CityUniversity Park, PA
Period6/22/096/24/09

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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