GAAS-ALGAS superlattice band structure under hydrostatic pressure: An analysis based on the envelope function approximation

J. P. Leburton, K. Kahen

Research output: Contribution to journalArticlepeer-review

Abstract

We propose new interface connection rules to determine the electronic properties of superlattices. Although similar to the so-called two-band model, these new rules are more general. Our approach is used to study the electronic structure of superlattices under high hydrostatic pressure. In our model, the influence of the pressure is taken into account by considering the modification of the energy gap and layer width of each material separately. It is demonstrated that the low value observed in the experimental determination of the pressure coefficient θSL of the GaAs layers is a consequence of the increasing rigidity of the energy band for energies away from the edges. Moreover the apparent homogeneity of θSL (GaAs) is the result of two opposing effects-the variation of the band rigidity and the narrowing of the layer thickness-which compensate each other.

Original languageEnglish (US)
Pages (from-to)49-53
Number of pages5
JournalSuperlattices and Microstructures
Volume1
Issue number1
DOIs
StatePublished - 1985

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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