GaAs 〈110〉 nanowires: Planar, self-aligned, twin-free, high-mobility and transfer-printable

Seth A. Fortuna, Su Chun Ik, Jianguo Wen, Ryan Dowdy, Xiuling Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present 〈110〉 planar, self-aligned, twinfree, and high mobility GaAs semiconductor nanowires grown on (100) GaAs substrates. In addition, such planar nanowires are directly transfer-printable and naturally integratable with existing processing technology and photonic and electronic device designs.

Original languageEnglish (US)
Title of host publication2009 14th OptoElectronics and Communications Conference, OECC 2009
DOIs
StatePublished - 2009
Event2009 14th OptoElectronics and Communications Conference, OECC 2009 - Hong Kong, China
Duration: Jul 13 2009Jul 17 2009

Publication series

Name2009 14th OptoElectronics and Communications Conference, OECC 2009

Other

Other2009 14th OptoElectronics and Communications Conference, OECC 2009
CountryChina
CityHong Kong
Period7/13/097/17/09

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Communication

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