Fundamental connection between hydrogen/deuterium desorption at silicon surfaces in ultrahigh vacuum and at oxide/silicon interfaces in metal-oxide-semiconductor devices

Kangguo Cheng, Jinju Lee, Zhi Chen, Samir A. Shah, Karl Hess, Jean Pierre Leburton, Joseph W. Lyding

Research output: Contribution to journalConference article

Abstract

The fundamental connection between desorption of H/D at silicon surfaces and at oxide/silicon interfaces was addressed. Multiple heating vibrational mechanism played an important role for hot-carrier-induced desorption of H/D at the interface in deep submicron devices. The results support the hypothesis of Si-H(D) bond strength variation at the oxide/silicon interfaces.

Original languageEnglish (US)
Pages (from-to)1119-1123
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume19
Issue number4
DOIs
StatePublished - Jul 1 2001
Event19th North American Conference on Molecular Beam Epitaxy (NAMBE-19) - Tempe, AZ, United States
Duration: Oct 15 2000Oct 18 2000

Fingerprint

MOS devices
Silicon oxides
Ultrahigh vacuum
Deuterium
silicon oxides
semiconductor devices
metal oxide semiconductors
ultrahigh vacuum
deuterium
Desorption
desorption
Silicon
Hydrogen
Hot carriers
silicon
hydrogen
Heating
heating

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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abstract = "The fundamental connection between desorption of H/D at silicon surfaces and at oxide/silicon interfaces was addressed. Multiple heating vibrational mechanism played an important role for hot-carrier-induced desorption of H/D at the interface in deep submicron devices. The results support the hypothesis of Si-H(D) bond strength variation at the oxide/silicon interfaces.",
author = "Kangguo Cheng and Jinju Lee and Zhi Chen and Shah, {Samir A.} and Karl Hess and Leburton, {Jean Pierre} and Lyding, {Joseph W.}",
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T1 - Fundamental connection between hydrogen/deuterium desorption at silicon surfaces in ultrahigh vacuum and at oxide/silicon interfaces in metal-oxide-semiconductor devices

AU - Cheng, Kangguo

AU - Lee, Jinju

AU - Chen, Zhi

AU - Shah, Samir A.

AU - Hess, Karl

AU - Leburton, Jean Pierre

AU - Lyding, Joseph W.

PY - 2001/7/1

Y1 - 2001/7/1

N2 - The fundamental connection between desorption of H/D at silicon surfaces and at oxide/silicon interfaces was addressed. Multiple heating vibrational mechanism played an important role for hot-carrier-induced desorption of H/D at the interface in deep submicron devices. The results support the hypothesis of Si-H(D) bond strength variation at the oxide/silicon interfaces.

AB - The fundamental connection between desorption of H/D at silicon surfaces and at oxide/silicon interfaces was addressed. Multiple heating vibrational mechanism played an important role for hot-carrier-induced desorption of H/D at the interface in deep submicron devices. The results support the hypothesis of Si-H(D) bond strength variation at the oxide/silicon interfaces.

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DO - 10.1116/1.1385687

M3 - Conference article

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JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

SN - 1071-1023

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ER -