Fundamental connection between hydrogen/deuterium desorption at silicon surfaces in ultrahigh vacuum and at oxide/silicon interfaces in metal-oxide-semiconductor devices

Kangguo Cheng, Jinju Lee, Zhi Chen, Samir A. Shah, Karl Hess, Jean Pierre Leburton, Joseph W. Lyding

Research output: Contribution to journalConference article

Abstract

The fundamental connection between desorption of H/D at silicon surfaces and at oxide/silicon interfaces was addressed. Multiple heating vibrational mechanism played an important role for hot-carrier-induced desorption of H/D at the interface in deep submicron devices. The results support the hypothesis of Si-H(D) bond strength variation at the oxide/silicon interfaces.

Original languageEnglish (US)
Pages (from-to)1119-1123
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume19
Issue number4
DOIs
StatePublished - Jul 1 2001
Event19th North American Conference on Molecular Beam Epitaxy (NAMBE-19) - Tempe, AZ, United States
Duration: Oct 15 2000Oct 18 2000

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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