Abstract
The fundamental connection between desorption of H/D at silicon surfaces and at oxide/silicon interfaces was addressed. Multiple heating vibrational mechanism played an important role for hot-carrier-induced desorption of H/D at the interface in deep submicron devices. The results support the hypothesis of Si-H(D) bond strength variation at the oxide/silicon interfaces.
Original language | English (US) |
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Pages (from-to) | 1119-1123 |
Number of pages | 5 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 19 |
Issue number | 4 |
DOIs | |
State | Published - Jul 2001 |
Event | 19th North American Conference on Molecular Beam Epitaxy (NAMBE-19) - Tempe, AZ, United States Duration: Oct 15 2000 → Oct 18 2000 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering