Fully transparent thin-film transistors based on aligned carbon nanotube arrays and indium tin oxide electrodes

Sunkook Kim, Sanghyun Ju, Ju Hee Back, Yi Xuan, Peide D. Ye, Moonsub Shim, David B. Janes, Saeed Mohammad

Research output: Contribution to journalArticlepeer-review

Abstract

A fully transparent thin-film-transistor (TFTs) based on a single-walled carbon nanotube (SWNTs) arrays and indium tin oxide electrodes (ITO) was demonstrated. A technique for realizing aligned SWNTs arrays on quartz substrate was used to place SWNTs into a specific area for the active channel layer. This TFT used an aligned array of SWNTs as the active channel, ITO as the gate and source/drain electrodes, and HfO2 as gate dielectric. Transparent ITO source/drain and gate electrodes provided excellent contacts to the SWNTs for high performance transistor characteristics. It was observed that fully transparent SWNT-TFTs improved aperture ratio efficiency in an active matrix arrays. This demonstration opened new opportunities for manufacturing transparent electronic circuits by using transparent SWNT-TFTs with ITO contacts.

Original languageEnglish (US)
Pages (from-to)564-568
Number of pages5
JournalAdvanced Materials
Volume21
Issue number5
DOIs
StatePublished - Feb 2 2009

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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