Abstract
A fully transparent thin-film-transistor (TFTs) based on a single-walled carbon nanotube (SWNTs) arrays and indium tin oxide electrodes (ITO) was demonstrated. A technique for realizing aligned SWNTs arrays on quartz substrate was used to place SWNTs into a specific area for the active channel layer. This TFT used an aligned array of SWNTs as the active channel, ITO as the gate and source/drain electrodes, and HfO2 as gate dielectric. Transparent ITO source/drain and gate electrodes provided excellent contacts to the SWNTs for high performance transistor characteristics. It was observed that fully transparent SWNT-TFTs improved aperture ratio efficiency in an active matrix arrays. This demonstration opened new opportunities for manufacturing transparent electronic circuits by using transparent SWNT-TFTs with ITO contacts.
Original language | English (US) |
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Pages (from-to) | 564-568 |
Number of pages | 5 |
Journal | Advanced Materials |
Volume | 21 |
Issue number | 5 |
DOIs | |
State | Published - Feb 2 2009 |
ASJC Scopus subject areas
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering