Fully quantum mechanical simulations of gated silicon quantum wire structures: Investigating the effects of changing wire cross-section on transport

Richard Akis; Matthew Gilbert; David K. Ferry

doi:10.1088/1742-6596/38/1/022

Fully quantum mechanical simulations of gated silicon quantum wire structures: Investigating the effects of changing wire cross-section on transport

Richard Akis, Matthew Gilbert, David K. Ferry

Research output: Contribution to journal › Article › peer-review

Abstract

We present transport simulations of three-dimensional (3D) silicon quantum wires in which electron-phonon scattering is incorporated via local modifications to the potential encountered by the electron waves. Computing resistance as a function of wire length, we find that the effects of dissipation essentially take hold immediately, and are apparent right from the point at which the wire is long enough to act as a true waveguide.

Original language	English (US)
Pages (from-to)	87-90
Number of pages	4
Journal	Journal of Physics: Conference Series
Volume	38
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/38/1/022
State	Published - May 10 2006
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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Fully quantum mechanical simulations of gated silicon quantum wire structures: Investigating the effects of changing wire cross-section on transport

Abstract

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