Fully integrable insulated gate bipolar transistor with a trench gate structure

P. V. Gilbert, G. W. Neudeck, R. Bashir, J. Siekkinen, J. Denton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A new, fully integrable insulated gate bipolar transistor (IGBT) with a trench gate structure, called the three-dimensional insulated gate bipolar transistor (3D-IGBT), is described. The 3D-IGBT utilizes selective epitaxial silicon to form a top contacted anode and still retain the cellular structure of vertically oriented devices. The 3D-IGBT is fabricated using a self-aligned process that permits an increase in its channel density by reducing the trench width. Two-dimensional computer simulations of the 3D-IGBT with a unit cell width of 15 microns have been performed and show an increase in channel density by a factor of more than 8 over the lateral IGBT.

Original languageEnglish (US)
Title of host publicationProc Int Symp Power Semicond Devices ICs
PublisherPubl by IEEE
Pages240-243
Number of pages4
ISBN (Print)0780313143
StatePublished - Jan 1 1993
Externally publishedYes
EventProceedings of the 5th International Symposium on Power Semiconductor Devices and ICs - Monterey, CA, USA
Duration: May 18 1993May 20 1993

Publication series

NameProc Int Symp Power Semicond Devices ICs

Other

OtherProceedings of the 5th International Symposium on Power Semiconductor Devices and ICs
CityMonterey, CA, USA
Period5/18/935/20/93

ASJC Scopus subject areas

  • Engineering(all)

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