@inproceedings{26a06f1584bd4d44bc37e1a5c2e5eba8,
title = "Fully integrable insulated gate bipolar transistor with a trench gate structure",
abstract = "A new, fully integrable insulated gate bipolar transistor (IGBT) with a trench gate structure, called the three-dimensional insulated gate bipolar transistor (3D-IGBT), is described. The 3D-IGBT utilizes selective epitaxial silicon to form a top contacted anode and still retain the cellular structure of vertically oriented devices. The 3D-IGBT is fabricated using a self-aligned process that permits an increase in its channel density by reducing the trench width. Two-dimensional computer simulations of the 3D-IGBT with a unit cell width of 15 microns have been performed and show an increase in channel density by a factor of more than 8 over the lateral IGBT.",
author = "Gilbert, {P. V.} and Neudeck, {G. W.} and R. Bashir and J. Siekkinen and J. Denton",
year = "1993",
language = "English (US)",
isbn = "0780313143",
series = "Proc Int Symp Power Semicond Devices ICs",
publisher = "Publ by IEEE",
pages = "240--243",
booktitle = "Proc Int Symp Power Semicond Devices ICs",
note = "Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs ; Conference date: 18-05-1993 Through 20-05-1993",
}