Fully Depleted Strained-SOI n- and p-MOSFETs on Bonded SGOI Substrates and Study of the SiGe/BOX Interface

Zhiyuan Cheng; Arthur J. Pitera; Minjoo L. Lee; Jongwan Jung; Judy L. Hoyt; Dimitri A. Antoniadis; Eugene A. Fitzgerald

doi:10.1109/LED.2003.823057

Fully Depleted Strained-SOI n- and p-MOSFETs on Bonded SGOI Substrates and Study of the SiGe/BOX Interface

Zhiyuan Cheng, Arthur J. Pitera, Minjoo L. Lee, Jongwan Jung, Judy L. Hoyt, Dimitri A. Antoniadis, Eugene A. Fitzgerald

Research output: Contribution to journal › Article › peer-review

Abstract

Fully depleted strained-Si n- and p-MOSFETs have been demonstrated on bonded-SiGe-on-insulator (SGOI) substrates. The fully depleted devices show significant electron and hole mobility enhancements of 60 and 35%, respectively, demonstrating that high material quality, thin SGOI substrates can be fabricated by a wafer bonding approach. The bottom SiGe/buried-oxide interface in the SGOI structure and its impact on fully depleted device performance are also investigated.

Original language	English (US)
Pages (from-to)	147-149
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	25
Issue number	3
DOIs	https://doi.org/10.1109/LED.2003.823057
State	Published - Mar 2004
Externally published	Yes

Keywords

Fully depleted (FD)
Graded SiGe buffer technique
Interface trap density
MOSFET
Mobility enhancement
SiGe-on-insulator (SGOI)
SiGe/buried-oxide (BOX) interface
Strained-Si
Strained-Si-on-insulator (SSOI)
Threading dislocation
Wafer bonding

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Online availability

10.1109/LED.2003.823057

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title = "Fully Depleted Strained-SOI n- and p-MOSFETs on Bonded SGOI Substrates and Study of the SiGe/BOX Interface",

abstract = "Fully depleted strained-Si n- and p-MOSFETs have been demonstrated on bonded-SiGe-on-insulator (SGOI) substrates. The fully depleted devices show significant electron and hole mobility enhancements of 60 and 35%, respectively, demonstrating that high material quality, thin SGOI substrates can be fabricated by a wafer bonding approach. The bottom SiGe/buried-oxide interface in the SGOI structure and its impact on fully depleted device performance are also investigated.",

keywords = "Fully depleted (FD), Graded SiGe buffer technique, Interface trap density, MOSFET, Mobility enhancement, SiGe-on-insulator (SGOI), SiGe/buried-oxide (BOX) interface, Strained-Si, Strained-Si-on-insulator (SSOI), Threading dislocation, Wafer bonding",

author = "Zhiyuan Cheng and Pitera, {Arthur J.} and Lee, {Minjoo L.} and Jongwan Jung and Hoyt, {Judy L.} and Antoniadis, {Dimitri A.} and Fitzgerald, {Eugene A.}",

note = "Funding Information: Manuscript received September 15, 2003; revised December 8, 2003. This work was supported in part by the Singapore-MIT Alliance program, and in part by the DARPA Heterogeneous Integration program. The review of this letter was arranged by Editor B. Yu.",

year = "2004",

month = mar,

doi = "10.1109/LED.2003.823057",

language = "English (US)",

volume = "25",

pages = "147--149",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Fully Depleted Strained-SOI n- and p-MOSFETs on Bonded SGOI Substrates and Study of the SiGe/BOX Interface

AU - Cheng, Zhiyuan

AU - Pitera, Arthur J.

AU - Lee, Minjoo L.

AU - Jung, Jongwan

AU - Hoyt, Judy L.

AU - Antoniadis, Dimitri A.

AU - Fitzgerald, Eugene A.

N1 - Funding Information: Manuscript received September 15, 2003; revised December 8, 2003. This work was supported in part by the Singapore-MIT Alliance program, and in part by the DARPA Heterogeneous Integration program. The review of this letter was arranged by Editor B. Yu.

PY - 2004/3

Y1 - 2004/3

N2 - Fully depleted strained-Si n- and p-MOSFETs have been demonstrated on bonded-SiGe-on-insulator (SGOI) substrates. The fully depleted devices show significant electron and hole mobility enhancements of 60 and 35%, respectively, demonstrating that high material quality, thin SGOI substrates can be fabricated by a wafer bonding approach. The bottom SiGe/buried-oxide interface in the SGOI structure and its impact on fully depleted device performance are also investigated.

AB - Fully depleted strained-Si n- and p-MOSFETs have been demonstrated on bonded-SiGe-on-insulator (SGOI) substrates. The fully depleted devices show significant electron and hole mobility enhancements of 60 and 35%, respectively, demonstrating that high material quality, thin SGOI substrates can be fabricated by a wafer bonding approach. The bottom SiGe/buried-oxide interface in the SGOI structure and its impact on fully depleted device performance are also investigated.

KW - Fully depleted (FD)

KW - Graded SiGe buffer technique

KW - Interface trap density

KW - MOSFET

KW - Mobility enhancement

KW - SiGe-on-insulator (SGOI)

KW - SiGe/buried-oxide (BOX) interface

KW - Strained-Si

KW - Strained-Si-on-insulator (SSOI)

KW - Threading dislocation

KW - Wafer bonding

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DO - 10.1109/LED.2003.823057

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JO - IEEE Electron Device Letters

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Fully Depleted Strained-SOI n- and p-MOSFETs on Bonded SGOI Substrates and Study of the SiGe/BOX Interface

Abstract

Keywords

ASJC Scopus subject areas

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