Abstract
Fully depleted strained-Si n- and p-MOSFETs have been demonstrated on bonded-SiGe-on-insulator (SGOI) substrates. The fully depleted devices show significant electron and hole mobility enhancements of 60 and 35%, respectively, demonstrating that high material quality, thin SGOI substrates can be fabricated by a wafer bonding approach. The bottom SiGe/buried-oxide interface in the SGOI structure and its impact on fully depleted device performance are also investigated.
Original language | English (US) |
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Pages (from-to) | 147-149 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 25 |
Issue number | 3 |
DOIs | |
State | Published - Mar 2004 |
Externally published | Yes |
Keywords
- Fully depleted (FD)
- Graded SiGe buffer technique
- Interface trap density
- MOSFET
- Mobility enhancement
- SiGe-on-insulator (SGOI)
- SiGe/buried-oxide (BOX) interface
- Strained-Si
- Strained-Si-on-insulator (SSOI)
- Threading dislocation
- Wafer bonding
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering