Fully Depleted Strained-SOI n- and p-MOSFETs on Bonded SGOI Substrates and Study of the SiGe/BOX Interface

Zhiyuan Cheng, Arthur J. Pitera, Minjoo L. Lee, Jongwan Jung, Judy L. Hoyt, Dimitri A. Antoniadis, Eugene A. Fitzgerald

Research output: Contribution to journalArticlepeer-review

Abstract

Fully depleted strained-Si n- and p-MOSFETs have been demonstrated on bonded-SiGe-on-insulator (SGOI) substrates. The fully depleted devices show significant electron and hole mobility enhancements of 60 and 35%, respectively, demonstrating that high material quality, thin SGOI substrates can be fabricated by a wafer bonding approach. The bottom SiGe/buried-oxide interface in the SGOI structure and its impact on fully depleted device performance are also investigated.

Original languageEnglish (US)
Pages (from-to)147-149
Number of pages3
JournalIEEE Electron Device Letters
Volume25
Issue number3
DOIs
StatePublished - Mar 2004
Externally publishedYes

Keywords

  • Fully depleted (FD)
  • Graded SiGe buffer technique
  • Interface trap density
  • MOSFET
  • Mobility enhancement
  • SiGe-on-insulator (SGOI)
  • SiGe/buried-oxide (BOX) interface
  • Strained-Si
  • Strained-Si-on-insulator (SSOI)
  • Threading dislocation
  • Wafer bonding

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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