Fully atomistic analysis of diffuse X-ray scattering spectra of silicon defects

K. Nordlund, P. Partyka, R. S. Averback

Research output: Contribution to journalConference articlepeer-review


Diffuse X-ray scattering is a useful method for studying defects in silicon and metals. Although the traditional approaches of analyzing experimental diffuse X-ray scattering data have given much information about the size of defects and defect clusters, they are not very well suited for determining the atomic configuration. We present a fully atomistic computational method to calculate the diffuse X-ray scattering line profile of an arbitrary atomic configuration, and compare line profiles of point defects and Frenkel pair configurations with experiment.

Original languageEnglish (US)
Pages (from-to)199-204
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1997
EventProceedings of the 1997 MRS Spring Symposium - San Francisco, CA, USA
Duration: Mar 31 1997Apr 4 1997

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Fully atomistic analysis of diffuse X-ray scattering spectra of silicon defects'. Together they form a unique fingerprint.

Cite this