Abstract
Diffuse X-ray scattering is a useful method for studying defects in silicon and metals. Although the traditional approaches of analyzing experimental diffuse X-ray scattering data have given much information about the size of defects and defect clusters, they are not very well suited for determining the atomic configuration. We present a fully atomistic computational method to calculate the diffuse X-ray scattering line profile of an arbitrary atomic configuration, and compare line profiles of point defects and Frenkel pair configurations with experiment.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 199-204 |
| Number of pages | 6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 469 |
| DOIs | |
| State | Published - 1997 |
| Event | Proceedings of the 1997 MRS Spring Symposium - San Francisco, CA, USA Duration: Mar 31 1997 → Apr 4 1997 |
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering