Fullerene thermal insulation for phase change memory

Cheolkyu Kim, Dong Seok Suh, Kijoon H.P. Kim, Youn Seon Kang, Tae Yon Lee, Yoonho Khang, David G Cahill

Research output: Contribution to journalArticle

Abstract

Phase change random access memory (PRAM) is unique among semiconductor devices because heat is intrinsic to the operation of the device, not just a by-product. Here, we apply a material that is exotic in the context of typical semiconductor devices but has highly desirable properties for PRAM. Thin films of C60 are semiconducting and show very low thermal conductance. By inserting a C60 layer between the phase change material and the metal electrode, we dramatically reduced the heat dissipation and, thereby, the operating current. A PRAM device incorporating a C60 layer operated stably for more than 105 cycles.

Original languageEnglish (US)
Article number013109
JournalApplied Physics Letters
Volume92
Issue number1
DOIs
StatePublished - Jan 16 2008

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Kim, C., Suh, D. S., Kim, K. H. P., Kang, Y. S., Lee, T. Y., Khang, Y., & Cahill, D. G. (2008). Fullerene thermal insulation for phase change memory. Applied Physics Letters, 92(1), [013109]. https://doi.org/10.1063/1.2830002