Full scale simulation of spin-qubit quantum dots and circuits

L. X. Zhang; J. Kim; D. Melnikov; Jean-Pierre Leburton

Full scale simulation of spin-qubit quantum dots and circuits

L. X. Zhang, J. Kim, D. Melnikov, Jean-Pierre Leburton

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We use quantum device modeling based on the three-dimensional self-consistent solution of the Kohn-Sham equation within the local spin density approximation (LSDA) to show that the design of quantum dot devices can be optimized for efficient spin-qubit operation. We also show that the design of a quantum point contact adjacent to laterally coupled planar quantum dots (LCPQD) can be optimized to produce maximum sensitivity to single-electron charging in the quantum dot.

Original language	English (US)
Title of host publication	Nanoscale Devices, Materials, and Biological Systems
Subtitle of host publication	Fundamental and Applications - Proceedings of the International Symposium
Editors	M. Cahay, M. Urquidi-Macdonald, S. Bandyopadhyay, P. Guo, H. Hasegawa, N. Koshida, J.P. Leburton, D.J. Lockwood, S. Seal, A. Stella
Pages	207-217
Number of pages	11
Volume	PV 2004-13
State	Published - 2005
Event	Nanoscale Devices, Materials, and Biological Systems: Fundamental and Applications - Proceedings of the International Symposium - Honolulu, HI, United States Duration: Oct 3 2004 → Oct 8 2004

Other

Other	Nanoscale Devices, Materials, and Biological Systems: Fundamental and Applications - Proceedings of the International Symposium
Country/Territory	United States
City	Honolulu, HI
Period	10/3/04 → 10/8/04

ASJC Scopus subject areas

Engineering(all)

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Zhang, L. X., Kim, J., Melnikov, D., & Leburton, J-P. (2005). Full scale simulation of spin-qubit quantum dots and circuits. In M. Cahay, M. Urquidi-Macdonald, S. Bandyopadhyay, P. Guo, H. Hasegawa, N. Koshida, J. P. Leburton, D. J. Lockwood, S. Seal, & A. Stella (Eds.), Nanoscale Devices, Materials, and Biological Systems: Fundamental and Applications - Proceedings of the International Symposium (Vol. PV 2004-13, pp. 207-217)

Full scale simulation of spin-qubit quantum dots and circuits. / Zhang, L. X.; Kim, J.; Melnikov, D. et al.
Nanoscale Devices, Materials, and Biological Systems: Fundamental and Applications - Proceedings of the International Symposium. ed. / M. Cahay; M. Urquidi-Macdonald; S. Bandyopadhyay; P. Guo; H. Hasegawa; N. Koshida; J.P. Leburton; D.J. Lockwood; S. Seal; A. Stella. Vol. PV 2004-13 2005. p. 207-217.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zhang, LX, Kim, J, Melnikov, D & Leburton, J-P 2005, Full scale simulation of spin-qubit quantum dots and circuits. in M Cahay, M Urquidi-Macdonald, S Bandyopadhyay, P Guo, H Hasegawa, N Koshida, JP Leburton, DJ Lockwood, S Seal & A Stella (eds), Nanoscale Devices, Materials, and Biological Systems: Fundamental and Applications - Proceedings of the International Symposium. vol. PV 2004-13, pp. 207-217, Nanoscale Devices, Materials, and Biological Systems: Fundamental and Applications - Proceedings of the International Symposium, Honolulu, HI, United States, 10/3/04.

Zhang LX, Kim J, Melnikov D, Leburton J-P. Full scale simulation of spin-qubit quantum dots and circuits. In Cahay M, Urquidi-Macdonald M, Bandyopadhyay S, Guo P, Hasegawa H, Koshida N, Leburton JP, Lockwood DJ, Seal S, Stella A, editors, Nanoscale Devices, Materials, and Biological Systems: Fundamental and Applications - Proceedings of the International Symposium. Vol. PV 2004-13. 2005. p. 207-217

Zhang, L. X. ; Kim, J. ; Melnikov, D. et al. / Full scale simulation of spin-qubit quantum dots and circuits. Nanoscale Devices, Materials, and Biological Systems: Fundamental and Applications - Proceedings of the International Symposium. editor / M. Cahay ; M. Urquidi-Macdonald ; S. Bandyopadhyay ; P. Guo ; H. Hasegawa ; N. Koshida ; J.P. Leburton ; D.J. Lockwood ; S. Seal ; A. Stella. Vol. PV 2004-13 2005. pp. 207-217

@inproceedings{42819d2bc10e4864a9e0744d1070d93d,

title = "Full scale simulation of spin-qubit quantum dots and circuits",

abstract = "We use quantum device modeling based on the three-dimensional self-consistent solution of the Kohn-Sham equation within the local spin density approximation (LSDA) to show that the design of quantum dot devices can be optimized for efficient spin-qubit operation. We also show that the design of a quantum point contact adjacent to laterally coupled planar quantum dots (LCPQD) can be optimized to produce maximum sensitivity to single-electron charging in the quantum dot.",

author = "Zhang, {L. X.} and J. Kim and D. Melnikov and Jean-Pierre Leburton",

year = "2005",

language = "English (US)",

volume = "PV 2004-13",

pages = "207--217",

editor = "M. Cahay and M. Urquidi-Macdonald and S. Bandyopadhyay and P. Guo and H. Hasegawa and N. Koshida and J.P. Leburton and D.J. Lockwood and S. Seal and A. Stella",

booktitle = "Nanoscale Devices, Materials, and Biological Systems",

note = "Nanoscale Devices, Materials, and Biological Systems: Fundamental and Applications - Proceedings of the International Symposium ; Conference date: 03-10-2004 Through 08-10-2004",

}

TY - GEN

T1 - Full scale simulation of spin-qubit quantum dots and circuits

AU - Zhang, L. X.

AU - Kim, J.

AU - Melnikov, D.

AU - Leburton, Jean-Pierre

PY - 2005

Y1 - 2005

N2 - We use quantum device modeling based on the three-dimensional self-consistent solution of the Kohn-Sham equation within the local spin density approximation (LSDA) to show that the design of quantum dot devices can be optimized for efficient spin-qubit operation. We also show that the design of a quantum point contact adjacent to laterally coupled planar quantum dots (LCPQD) can be optimized to produce maximum sensitivity to single-electron charging in the quantum dot.

AB - We use quantum device modeling based on the three-dimensional self-consistent solution of the Kohn-Sham equation within the local spin density approximation (LSDA) to show that the design of quantum dot devices can be optimized for efficient spin-qubit operation. We also show that the design of a quantum point contact adjacent to laterally coupled planar quantum dots (LCPQD) can be optimized to produce maximum sensitivity to single-electron charging in the quantum dot.

UR - http://www.scopus.com/inward/record.url?scp=28644434655&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=28644434655&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:28644434655

VL - PV 2004-13

SP - 207

EP - 217

BT - Nanoscale Devices, Materials, and Biological Systems

A2 - Cahay, M.

A2 - Urquidi-Macdonald, M.

A2 - Bandyopadhyay, S.

A2 - Guo, P.

A2 - Hasegawa, H.

A2 - Koshida, N.

A2 - Leburton, J.P.

A2 - Lockwood, D.J.

A2 - Seal, S.

A2 - Stella, A.

T2 - Nanoscale Devices, Materials, and Biological Systems: Fundamental and Applications - Proceedings of the International Symposium

Y2 - 3 October 2004 through 8 October 2004

ER -

Full scale simulation of spin-qubit quantum dots and circuits

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