Full-quantum simulation of p-type junctionless transistors with multi-band k · p model

Jun Z. Huang, Weng Cho Chew, Li Jun Jiang, Jie Peng, Chi Yung Yam, Guan Hua Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

By adopting a model order reduction technique, we have successfully constructed a program for efficient simulation of nanowire transistors based on the multi-band k · p model and non-equilibrium Green's function (NEGF) approach. We then study for the first time the influences of various device parameters on the performances of p-type junctionless (JL) transistors and compare them to traditional inversion mode (IM) devices.

Original languageEnglish (US)
Title of host publication2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
DOIs
StatePublished - Dec 23 2013
Event2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 - Hong Kong, Hong Kong
Duration: Jun 3 2013Jun 5 2013

Publication series

Name2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

Other

Other2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
CountryHong Kong
CityHong Kong
Period6/3/136/5/13

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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