Full-quantum simulation of p-type junctionless transistors with multi-band k · p model

Jun Z. Huang; Weng Cho Chew; Li Jun Jiang; Jie Peng; Chi Yung Yam; Guan Hua Chen

doi:10.1109/EDSSC.2013.6628164

Full-quantum simulation of p-type junctionless transistors with multi-band k · p model

Jun Z. Huang, Weng Cho Chew, Li Jun Jiang, Jie Peng, Chi Yung Yam, Guan Hua Chen

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

By adopting a model order reduction technique, we have successfully constructed a program for efficient simulation of nanowire transistors based on the multi-band k · p model and non-equilibrium Green's function (NEGF) approach. We then study for the first time the influences of various device parameters on the performances of p-type junctionless (JL) transistors and compare them to traditional inversion mode (IM) devices.

Original language	English (US)
Title of host publication	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
DOIs	https://doi.org/10.1109/EDSSC.2013.6628164
State	Published - Dec 23 2013
Event	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 - Hong Kong, Hong Kong Duration: Jun 3 2013 → Jun 5 2013

Publication series

Name	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

Other

Other	2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
Country/Territory	Hong Kong
City	Hong Kong
Period	6/3/13 → 6/5/13

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Online availability

10.1109/EDSSC.2013.6628164

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Huang, J. Z., Chew, W. C., Jiang, L. J., Peng, J., Yam, C. Y., & Chen, G. H. (2013). Full-quantum simulation of p-type junctionless transistors with multi-band k · p model. In 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 [6628164] (2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013). https://doi.org/10.1109/EDSSC.2013.6628164

Full-quantum simulation of p-type junctionless transistors with multi-band k · p model. / Huang, Jun Z.; Chew, Weng Cho; Jiang, Li Jun et al.

2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013. 2013. 6628164 (2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Huang, JZ, Chew, WC, Jiang, LJ, Peng, J, Yam, CY & Chen, GH 2013, Full-quantum simulation of p-type junctionless transistors with multi-band k · p model. in 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013., 6628164, 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013, 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013, Hong Kong, Hong Kong, 6/3/13. https://doi.org/10.1109/EDSSC.2013.6628164

Huang JZ, Chew WC, Jiang LJ, Peng J, Yam CY, Chen GH. Full-quantum simulation of p-type junctionless transistors with multi-band k · p model. In 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013. 2013. 6628164. (2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013). doi: 10.1109/EDSSC.2013.6628164

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title = "Full-quantum simulation of p-type junctionless transistors with multi-band k · p model",

abstract = "By adopting a model order reduction technique, we have successfully constructed a program for efficient simulation of nanowire transistors based on the multi-band k · p model and non-equilibrium Green's function (NEGF) approach. We then study for the first time the influences of various device parameters on the performances of p-type junctionless (JL) transistors and compare them to traditional inversion mode (IM) devices.",

author = "Huang, {Jun Z.} and Chew, {Weng Cho} and Jiang, {Li Jun} and Jie Peng and Yam, {Chi Yung} and Chen, {Guan Hua}",

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Full-quantum simulation of p-type junctionless transistors with multi-band k · p model

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