Full Functionality of LSI Gate Arrays Fabricated on 3-in-Diameter, MOCVD-Grown GaAs-on-Silicon Substrates

Keyphrases

• Metal-organic Chemical Vapor Deposition (MOCVD) 100%
• Gallium Arsenide 100%
• On-Silicon 100%
• Gate Array 100%
• Defect Density 25%
• Transistor 25%
• High Density 25%
• Inverter 25%
• Digital Circuits 25%
• Wafer Level 25%
• Divider 25%
• D Flip-flop 25%
• LSI Circuits 25%
• 8-bit Adder 25%
• Divide-by-4 25%

Engineering

• Gallium Arsenide 100%
• Silicon Substrate 100%
• LSI Circuits 33%
• Defect Density 33%
• Flip Flop Circuits 33%
• Silicon Material 33%
• Bit Adder 33%
• Emitter Coupled Logic Circuits 33%
• Digital Electronics 33%
• Inverter 33%

Material Science

• Electronic Circuit 100%
• Silicon 100%
• Gallium Arsenide 100%
• Transistor 33%
• Density 33%
• Defect Density 33%
• Silicon Material 33%