Full Functionality of LSI Gate Arrays Fabricated on 3-in-Diameter, MOCVD-Grown GaAs-on-Silicon Substrates

C. Ito, D. McIntyre, T. White, Milton Feng, R. Schoendube, R. Kaliski, H. B. Kim

Research output: Contribution to journalArticle

Abstract

Fully functional, 504-gate gate arrays have been fabricated on an MOCVD-grown, 3-in-diameter, GaAs-on-silicon substrate. Each ECL-compatible gate array consists of an 8-bit adder, a D flip-flop, a 214 divider (with a divide-by-4 tap), and a 263-stage inverter string. These circuits represent 90-percent gate utilization, or approximately 6600 transistors. The wafer-level yield of fully functional gate arrays is 10.7 percent. This is the first demonstration of both total functionality and yield for a digital circuit with LSI-level complexity using MOCVD-grown GaAs-on-silicon material and shows that this material, even with defect densities greater than 108 cm-2, is certainly viable for high-density LSI circuits.

Original languageEnglish (US)
Pages (from-to)371-373
Number of pages3
JournalIEEE Electron Device Letters
Volume9
Issue number8
DOIs
StatePublished - Aug 1988
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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