Full-component modeling and simulation of charged device model ESD

Kuo Hsuan Meng, Vrashank Shukla, Elyse Rosenbaum

Research output: Contribution to journalArticle

Abstract

This paper presents a methodology to construct an equivalent circuit model of a packaged integrated circuit mounted on a field-induced charged device model electrostatic discharge tester. Circuit simulation is used to obtain the full-component current and voltage distributions. This paper focuses on predicting overvoltage stress at power domain crossing circuits.

Original languageEnglish (US)
Article number7308012
Pages (from-to)1105-1113
Number of pages9
JournalIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Volume35
Issue number7
DOIs
StatePublished - Jul 2016

Fingerprint

Electrostatic discharge
Circuit simulation
Equivalent circuits
Integrated circuits
Networks (circuits)
Electric potential

Keywords

  • Charged device model (CDM)
  • Circuit simulation
  • Cross-domain stress
  • Emulates electrostatic discharges (ESD)
  • Modeling

ASJC Scopus subject areas

  • Software
  • Computer Graphics and Computer-Aided Design
  • Electrical and Electronic Engineering

Cite this

Full-component modeling and simulation of charged device model ESD. / Meng, Kuo Hsuan; Shukla, Vrashank; Rosenbaum, Elyse.

In: IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol. 35, No. 7, 7308012, 07.2016, p. 1105-1113.

Research output: Contribution to journalArticle

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