Full-component modeling and simulation of charged device model ESD

Kuo Hsuan Meng; Vrashank Shukla; Elyse Rosenbaum

doi:10.1109/TCAD.2015.2495196

Full-component modeling and simulation of charged device model ESD

Kuo Hsuan Meng, Vrashank Shukla, Elyse Rosenbaum

Research output: Contribution to journal › Article › peer-review

Abstract

This paper presents a methodology to construct an equivalent circuit model of a packaged integrated circuit mounted on a field-induced charged device model electrostatic discharge tester. Circuit simulation is used to obtain the full-component current and voltage distributions. This paper focuses on predicting overvoltage stress at power domain crossing circuits.

Original language	English (US)
Article number	7308012
Pages (from-to)	1105-1113
Number of pages	9
Journal	IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Volume	35
Issue number	7
DOIs	https://doi.org/10.1109/TCAD.2015.2495196
State	Published - Jul 2016

Keywords

Charged device model (CDM)
Circuit simulation
Cross-domain stress
Emulates electrostatic discharges (ESD)
Modeling

ASJC Scopus subject areas

Software
Computer Graphics and Computer-Aided Design
Electrical and Electronic Engineering

Online availability

10.1109/TCAD.2015.2495196

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abstract = "This paper presents a methodology to construct an equivalent circuit model of a packaged integrated circuit mounted on a field-induced charged device model electrostatic discharge tester. Circuit simulation is used to obtain the full-component current and voltage distributions. This paper focuses on predicting overvoltage stress at power domain crossing circuits.",

keywords = "Charged device model (CDM), Circuit simulation, Cross-domain stress, Emulates electrostatic discharges (ESD), Modeling",

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KW - Cross-domain stress

KW - Emulates electrostatic discharges (ESD)

KW - Modeling

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Full-component modeling and simulation of charged device model ESD

Abstract

Keywords

ASJC Scopus subject areas

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