Abstract
The calculated results of electron transport properties of wurtzite ZnO with the full band Monte Carlo simulations are presented. The electronic band structure data being used in the simulations is based on the first-principles of total-energy pseudopotential method. The negative differential resistance effect in velocity-field characteristics of wurtzite ZnO was observed. At room temperature the threshold electric field is about 2.4 × 105 V / cm, and the peak drift velocity is about 1.5 × 107 cm / s. The electron mobility obtained in this work is approximately 285 cm2/Vs at room temperature.
Original language | English (US) |
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Pages (from-to) | 482-486 |
Number of pages | 5 |
Journal | Computer Physics Communications |
Volume | 175 |
Issue number | 7 |
DOIs | |
State | Published - Oct 1 2006 |
Keywords
- Electronic transport
- Monte Carlo simulation
- ZnO
ASJC Scopus subject areas
- Hardware and Architecture
- General Physics and Astronomy