Frustration of photocrystallization in amorphous selenium films and film-polymer structures near the glass transition

G. P. Lindberg, R. E. Tallman, Shiva Abbaszadeh, K. S. Karim, J. A. Rowlands, A. Reznik, B. A. Weinstein

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigate the stability against photo-induced crystallization (PiC) and photo-induced darkening (PiD) in a series of amorphous selenium (a-Se) films grown with and without polyimide buffer layers[1] for temperatures below and above the glass transition (Tg ∼ 313 K). The a-Se films are bulk-like (∼16.5 μm thick), and contain a low concentration of As (< 0.2%). We find that due to strain relief, a thin layer (∼1 μm) of polyimide greatly stabilizes the samples against PiC and reduces the effect of PiD.

Original languageEnglish (US)
Title of host publicationPhysics of Semiconductors - Proceedings of the 31st International Conference on the Physics of Semiconductors, ICPS 2012
PublisherAmerican Institute of Physics Inc.
Pages19-20
Number of pages2
ISBN (Print)9780735411944
DOIs
StatePublished - Jan 1 2013
Event31st International Conference on the Physics of Semiconductors, ICPS 2012 - Zurich, Switzerland
Duration: Jul 29 2012Aug 3 2012

Publication series

NameAIP Conference Proceedings
Volume1566
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other31st International Conference on the Physics of Semiconductors, ICPS 2012
CountrySwitzerland
CityZurich
Period7/29/128/3/12

Keywords

  • chalcogenide glasses
  • interface effects
  • nucleation
  • photocrystallization
  • photodarkening
  • strain

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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