Fringing-field dielectrophoretic assembly of ultrahigh-density semiconducting nanotube arrays with a self-limited pitch

Qing Cao, Shu Jen Han, George S. Tulevski

Research output: Contribution to journalArticle

Abstract

One key challenge of realizing practical high-performance electronic devices based on single-walled carbon nanotubes is to produce electronically pure nanotube arrays with both a minuscule and uniform inter-tube pitch for sufficient device-packing density and homogeneity. Here we develop a method in which the alternating voltage-fringing electric field formed between surface microelectrodes and the substrate is utilized to assemble semiconducting nanotubes into well-aligned, ultrahigh-density and submonolayered arrays, with a consistent pitch as small as 21±6 nm determined by a self-limiting mechanism, based on the unique field focusing and screening effects of the fringing field. Field-effect transistors based on such nanotube arrays exhibit record high device transconductance (>50 μS μm-1) and decent on current per nanotube (∼1μA per tube) together with high on/off ratios at a drain bias of -1V.

Original languageEnglish (US)
Article number5071
JournalNature communications
Volume5
DOIs
StatePublished - Feb 2015
Externally publishedYes

Fingerprint

Nanotubes
nanotubes
assembly
Equipment and Supplies
tubes
Carbon Nanotubes
Microelectrodes
packing density
Transconductance
transconductance
Single-walled carbon nanotubes (SWCN)
Field effect transistors
homogeneity
Screening
screening
field effect transistors
carbon nanotubes
Electric fields
electric fields
Electric potential

ASJC Scopus subject areas

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Physics and Astronomy(all)

Cite this

Fringing-field dielectrophoretic assembly of ultrahigh-density semiconducting nanotube arrays with a self-limited pitch. / Cao, Qing; Han, Shu Jen; Tulevski, George S.

In: Nature communications, Vol. 5, 5071, 02.2015.

Research output: Contribution to journalArticle

@article{4d19276d03c8453fb14aa2f3fef575a7,
title = "Fringing-field dielectrophoretic assembly of ultrahigh-density semiconducting nanotube arrays with a self-limited pitch",
abstract = "One key challenge of realizing practical high-performance electronic devices based on single-walled carbon nanotubes is to produce electronically pure nanotube arrays with both a minuscule and uniform inter-tube pitch for sufficient device-packing density and homogeneity. Here we develop a method in which the alternating voltage-fringing electric field formed between surface microelectrodes and the substrate is utilized to assemble semiconducting nanotubes into well-aligned, ultrahigh-density and submonolayered arrays, with a consistent pitch as small as 21±6 nm determined by a self-limiting mechanism, based on the unique field focusing and screening effects of the fringing field. Field-effect transistors based on such nanotube arrays exhibit record high device transconductance (>50 μS μm-1) and decent on current per nanotube (∼1μA per tube) together with high on/off ratios at a drain bias of -1V.",
author = "Qing Cao and Han, {Shu Jen} and Tulevski, {George S.}",
year = "2015",
month = "2",
doi = "10.1038/ncomms6071",
language = "English (US)",
volume = "5",
journal = "Nature Communications",
issn = "2041-1723",
publisher = "Nature Publishing Group",

}

TY - JOUR

T1 - Fringing-field dielectrophoretic assembly of ultrahigh-density semiconducting nanotube arrays with a self-limited pitch

AU - Cao, Qing

AU - Han, Shu Jen

AU - Tulevski, George S.

PY - 2015/2

Y1 - 2015/2

N2 - One key challenge of realizing practical high-performance electronic devices based on single-walled carbon nanotubes is to produce electronically pure nanotube arrays with both a minuscule and uniform inter-tube pitch for sufficient device-packing density and homogeneity. Here we develop a method in which the alternating voltage-fringing electric field formed between surface microelectrodes and the substrate is utilized to assemble semiconducting nanotubes into well-aligned, ultrahigh-density and submonolayered arrays, with a consistent pitch as small as 21±6 nm determined by a self-limiting mechanism, based on the unique field focusing and screening effects of the fringing field. Field-effect transistors based on such nanotube arrays exhibit record high device transconductance (>50 μS μm-1) and decent on current per nanotube (∼1μA per tube) together with high on/off ratios at a drain bias of -1V.

AB - One key challenge of realizing practical high-performance electronic devices based on single-walled carbon nanotubes is to produce electronically pure nanotube arrays with both a minuscule and uniform inter-tube pitch for sufficient device-packing density and homogeneity. Here we develop a method in which the alternating voltage-fringing electric field formed between surface microelectrodes and the substrate is utilized to assemble semiconducting nanotubes into well-aligned, ultrahigh-density and submonolayered arrays, with a consistent pitch as small as 21±6 nm determined by a self-limiting mechanism, based on the unique field focusing and screening effects of the fringing field. Field-effect transistors based on such nanotube arrays exhibit record high device transconductance (>50 μS μm-1) and decent on current per nanotube (∼1μA per tube) together with high on/off ratios at a drain bias of -1V.

UR - http://www.scopus.com/inward/record.url?scp=84919738270&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84919738270&partnerID=8YFLogxK

U2 - 10.1038/ncomms6071

DO - 10.1038/ncomms6071

M3 - Article

AN - SCOPUS:84919738270

VL - 5

JO - Nature Communications

JF - Nature Communications

SN - 2041-1723

M1 - 5071

ER -