Frequency response of sub-micrometre pseudomorphic AlGaAs/InGaAs/GaAs MODFETs at cryogenic temperatures

J. Laskar; J. Kolodzey; A. Ketterson; S. Caracci; I. Adesida

doi:10.1016/0011-2275(90)90221-W

Frequency response of sub-micrometre pseudomorphic AlGaAs/InGaAs/GaAs MODFETs at cryogenic temperatures

J. Laskar, J. Kolodzey, A. Ketterson, S. Caracci, I. Adesida

Research output: Contribution to journal › Article › peer-review

Abstract

This paper reports on the d.c. and high frequency characteristics of pseudomorphic AlGaAs/InGaAs/GaAs MODFETs with gate lengths from 1.73 to 0.35 μm at 300 and 110 K. Significant device improvement is shown at 110 K, with current gain cut-off frequency, F_T, increasing by 80% for gate length L_g = 1.73 μm and 15% for L_g = 0.35 μm. The d.c. and high frequency behaviour is analysed and it is shown that electron velocity, not mobility, controls transport in these devices.

Original language	English (US)
Pages (from-to)	1134-1139
Number of pages	6
Journal	Cryogenics
Volume	30
Issue number	12
DOIs	https://doi.org/10.1016/0011-2275(90)90221-W
State	Published - Dec 1990
Externally published	Yes

Keywords

electrical properties
frequency characteristics
transistors

ASJC Scopus subject areas

General Materials Science
General Physics and Astronomy

Online availability

10.1016/0011-2275(90)90221-W

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@article{e9850593f1b54156b3deb79d7164b3dd,

title = "Frequency response of sub-micrometre pseudomorphic AlGaAs/InGaAs/GaAs MODFETs at cryogenic temperatures",

abstract = "This paper reports on the d.c. and high frequency characteristics of pseudomorphic AlGaAs/InGaAs/GaAs MODFETs with gate lengths from 1.73 to 0.35 μm at 300 and 110 K. Significant device improvement is shown at 110 K, with current gain cut-off frequency, FT, increasing by 80% for gate length Lg = 1.73 μm and 15% for Lg = 0.35 μm. The d.c. and high frequency behaviour is analysed and it is shown that electron velocity, not mobility, controls transport in these devices.",

keywords = "electrical properties, frequency characteristics, transistors",

author = "J. Laskar and J. Kolodzey and A. Ketterson and S. Caracci and I. Adesida",

note = "Funding Information: Special thanks are due to J. Baillargeon and K.Y. Cheng for helpful discussions. The authors also wish to thank Cascade Microtech and Hewlett-Packard for donations of equipment. This work was supported by the National Science Foundation under grant ECD89-43166.",

year = "1990",

month = dec,

doi = "10.1016/0011-2275(90)90221-W",

language = "English (US)",

volume = "30",

pages = "1134--1139",

journal = "Cryogenics",

issn = "0011-2275",

publisher = "Elsevier Ltd",

number = "12",

}

TY - JOUR

T1 - Frequency response of sub-micrometre pseudomorphic AlGaAs/InGaAs/GaAs MODFETs at cryogenic temperatures

AU - Laskar, J.

AU - Kolodzey, J.

AU - Ketterson, A.

AU - Caracci, S.

AU - Adesida, I.

N1 - Funding Information: Special thanks are due to J. Baillargeon and K.Y. Cheng for helpful discussions. The authors also wish to thank Cascade Microtech and Hewlett-Packard for donations of equipment. This work was supported by the National Science Foundation under grant ECD89-43166.

PY - 1990/12

Y1 - 1990/12

N2 - This paper reports on the d.c. and high frequency characteristics of pseudomorphic AlGaAs/InGaAs/GaAs MODFETs with gate lengths from 1.73 to 0.35 μm at 300 and 110 K. Significant device improvement is shown at 110 K, with current gain cut-off frequency, FT, increasing by 80% for gate length Lg = 1.73 μm and 15% for Lg = 0.35 μm. The d.c. and high frequency behaviour is analysed and it is shown that electron velocity, not mobility, controls transport in these devices.

AB - This paper reports on the d.c. and high frequency characteristics of pseudomorphic AlGaAs/InGaAs/GaAs MODFETs with gate lengths from 1.73 to 0.35 μm at 300 and 110 K. Significant device improvement is shown at 110 K, with current gain cut-off frequency, FT, increasing by 80% for gate length Lg = 1.73 μm and 15% for Lg = 0.35 μm. The d.c. and high frequency behaviour is analysed and it is shown that electron velocity, not mobility, controls transport in these devices.

KW - electrical properties

KW - frequency characteristics

KW - transistors

UR - http://www.scopus.com/inward/record.url?scp=0025557669&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025557669&partnerID=8YFLogxK

U2 - 10.1016/0011-2275(90)90221-W

DO - 10.1016/0011-2275(90)90221-W

M3 - Article

AN - SCOPUS:0025557669

SN - 0011-2275

VL - 30

SP - 1134

EP - 1139

JO - Cryogenics

JF - Cryogenics

IS - 12

ER -

Frequency response of sub-micrometre pseudomorphic AlGaAs/InGaAs/GaAs MODFETs at cryogenic temperatures

Abstract

Keywords

ASJC Scopus subject areas

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