Freely migrating defects in ion-irradiated Cu₃Au

The efficiency of producing freely migrating vacancy defects in irradiated Cu₃Au was examined using electrical resistivity measurements of radiation-induced ordering on highly perfect single-crystal films. Relative efficiencies for He, Ne, and Ar bombardments at different ion energy and specimen temperature were obtained. The ratio of the efficiencies of 0.6 MeV Ne to He increased with temperature from ∼0.25 at 340 K to a saturation value of ∼0.40 at 520 K. For Ar and He, the ratio increased from ∼0.11 at 360 K to ∼0.18 at 540 K. Estimates indicate that about half of all defects created in cascades are freely migrating.