Forming of deuterium containing nitride spacers and fabrication of semiconductor devices

Joseph W Lyding; Karl Hess

Forming of deuterium containing nitride spacers and fabrication of semiconductor devices

Joseph W Lyding (Inventor), Karl Hess (Inventor)

Research output: Patent

Abstract

Described are preferred processes for conditioning semiconductor devices with deuterium to improve operating characteristics and decrease depassivation which occurs during the course of device operation. Also described are semiconductor devices which can be prepared by such processes.

Original language	English (US)
U.S. patent number	6147014
State	Published - Nov 14 2000

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title = "Forming of deuterium containing nitride spacers and fabrication of semiconductor devices",

abstract = "Described are preferred processes for conditioning semiconductor devices with deuterium to improve operating characteristics and decrease depassivation which occurs during the course of device operation. Also described are semiconductor devices which can be prepared by such processes.",

author = "Lyding, {Joseph W} and Karl Hess",

year = "2000",

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language = "English (US)",

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TY - PAT

T1 - Forming of deuterium containing nitride spacers and fabrication of semiconductor devices

AU - Lyding, Joseph W

AU - Hess, Karl

PY - 2000/11/14

Y1 - 2000/11/14

N2 - Described are preferred processes for conditioning semiconductor devices with deuterium to improve operating characteristics and decrease depassivation which occurs during the course of device operation. Also described are semiconductor devices which can be prepared by such processes.

AB - Described are preferred processes for conditioning semiconductor devices with deuterium to improve operating characteristics and decrease depassivation which occurs during the course of device operation. Also described are semiconductor devices which can be prepared by such processes.

M3 - Patent

M1 - 6147014

ER -

Forming of deuterium containing nitride spacers and fabrication of semiconductor devices

Abstract

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