Forming Disordered Layer By Controlled Diffusion In Heterojunction III-V Semiconductor

Nick Holonyak (Inventor)

Research output: Patent

Abstract

A method is disclosed for converting a multilayer semiconductor structure, that includes active semiconductor regions interposed between semiconductor barrier layers, into a disordered alloy by introduction of a specified disordering element into the multilayer structure. Devices made using the method are also disclosed.
Original languageEnglish (US)
U.S. patent number4639275
Filing date8/31/84
StatePublished - Jan 27 1987

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