Abstract
A method is disclosed for converting a multilayer semiconductor structure, that includes active semiconductor regions interposed between semiconductor barrier layers, into a disordered alloy by introduction of a specified disordering element into the multilayer structure. Devices made using the method are also disclosed.
| Original language | English (US) |
|---|---|
| U.S. patent number | 4639275 |
| Filing date | 8/31/84 |
| State | Published - Jan 27 1987 |