Forming Disordered Layer By Controlled Diffusion In Heterojunction III-V Semiconductor

Nick Holonyak (Inventor)

Research output: Patent

Abstract

Silicon or krypton is used as a disordering element to selectively disorder layers in a heterojunction III-V semiconductor.

@misc{8c955d544ac842dd8bc532e54f44c9ca,

title = "Forming Disordered Layer By Controlled Diffusion In Heterojunction III-V Semiconductor",

abstract = "Silicon or krypton is used as a disordering element to selectively disorder layers in a heterojunction III-V semiconductor.",

author = "Nick Holonyak",

year = "1985",

month = apr,

day = "16",

language = "English (US)",

type = "Patent",

note = "4511408",

}

TY - PAT

T1 - Forming Disordered Layer By Controlled Diffusion In Heterojunction III-V Semiconductor

AU - Holonyak, Nick

PY - 1985/4/16

Y1 - 1985/4/16

N2 - Silicon or krypton is used as a disordering element to selectively disorder layers in a heterojunction III-V semiconductor.

AB - Silicon or krypton is used as a disordering element to selectively disorder layers in a heterojunction III-V semiconductor.

M3 - Patent

M1 - 4511408

Y2 - 1982/04/22

ER -