Formation of low-resistance ohmic contact by damage-proof selective-area growth of single-crystal n ⁺-GaN using plasma-assisted molecular beam epitaxy

Physics & Astronomy

• low resistance 73%
• electric contacts 56%
• molecular beam epitaxy 54%
• etching 48%
• damage 46%
• single crystals 40%
• contact resistance 33%
• secondary ion mass spectrometry 16%
• photoelectron spectroscopy 13%
• oxides 10%
• fabrication 9%
• x rays 7%
• performance 7%

Engineering & Materials Science

• Molecular beam epitaxy 100%
• Ohmic contacts 97%
• Single crystals 74%
• Plasmas 59%
• Contact resistance 37%
• Oxides 13%

Chemical Compounds

• Molecular Beam Epitaxy 92%
• Etching 58%
• Single Crystalline Solid 45%
• Contact Resistance 40%
• Secondary Ion Mass Spectroscopy 17%
• Surface 15%
• Polycrystalline Solid 14%
• X-Ray Photoelectron Spectroscopy 11%
• Resistance 10%
• Oxide 8%