Formation of high aspect ratio GaAs nanostructures with metal-assisted chemical etching

Matt Dejarld; Jae Cheol Shin; Winston Chern; Debashis Chanda; Karthik Balasundaram; John A. Rogers; Xiuling Li

doi:10.1021/nl202708d

Formation of high aspect ratio GaAs nanostructures with metal-assisted chemical etching

Matt Dejarld, Jae Cheol Shin, Winston Chern, Debashis Chanda, Karthik Balasundaram, John A. Rogers, Xiuling Li

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Periodic high aspect ratio GaAs nanopillars with widths in the range of 500-1000 nm are produced by metal-assisted chemical etching (MacEtch) using n-type (100) GaAs substrates and Au catalyst films patterned with soft lithography. Depending on the etchant concentration and etching temperature, GaAs nanowires with either vertical or undulating sidewalls are formed with an etch rate of 1-2 μm/min. The realization of high aspect ratio III-V nanostructure arrays by wet etching can potentially transform the fabrication of a variety of optoelectronic device structures including distributed Bragg reflector (DBR) and distributed feedback (DFB) semiconductor lasers, where the surface grating is currently fabricated by dry etching.

Original language	English (US)
Pages (from-to)	5259-5263
Number of pages	5
Journal	Nano letters
Volume	11
Issue number	12
DOIs	https://doi.org/10.1021/nl202708d
State	Published - Dec 14 2011

Keywords

GaAs
high aspect ratio
MacEtch
metal-assisted chemical etching
nanopillar
Nanowire

ASJC Scopus subject areas

Condensed Matter Physics
Bioengineering
General Chemistry
General Materials Science
Mechanical Engineering

Online availability

10.1021/nl202708d

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Cite this

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abstract = "Periodic high aspect ratio GaAs nanopillars with widths in the range of 500-1000 nm are produced by metal-assisted chemical etching (MacEtch) using n-type (100) GaAs substrates and Au catalyst films patterned with soft lithography. Depending on the etchant concentration and etching temperature, GaAs nanowires with either vertical or undulating sidewalls are formed with an etch rate of 1-2 μm/min. The realization of high aspect ratio III-V nanostructure arrays by wet etching can potentially transform the fabrication of a variety of optoelectronic device structures including distributed Bragg reflector (DBR) and distributed feedback (DFB) semiconductor lasers, where the surface grating is currently fabricated by dry etching.",

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doi = "10.1021/nl202708d",

language = "English (US)",

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journal = "Nano letters",

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AU - Dejarld, Matt

AU - Shin, Jae Cheol

AU - Chern, Winston

AU - Chanda, Debashis

AU - Balasundaram, Karthik

AU - Rogers, John A.

AU - Li, Xiuling

PY - 2011/12/14

Y1 - 2011/12/14

N2 - Periodic high aspect ratio GaAs nanopillars with widths in the range of 500-1000 nm are produced by metal-assisted chemical etching (MacEtch) using n-type (100) GaAs substrates and Au catalyst films patterned with soft lithography. Depending on the etchant concentration and etching temperature, GaAs nanowires with either vertical or undulating sidewalls are formed with an etch rate of 1-2 μm/min. The realization of high aspect ratio III-V nanostructure arrays by wet etching can potentially transform the fabrication of a variety of optoelectronic device structures including distributed Bragg reflector (DBR) and distributed feedback (DFB) semiconductor lasers, where the surface grating is currently fabricated by dry etching.

AB - Periodic high aspect ratio GaAs nanopillars with widths in the range of 500-1000 nm are produced by metal-assisted chemical etching (MacEtch) using n-type (100) GaAs substrates and Au catalyst films patterned with soft lithography. Depending on the etchant concentration and etching temperature, GaAs nanowires with either vertical or undulating sidewalls are formed with an etch rate of 1-2 μm/min. The realization of high aspect ratio III-V nanostructure arrays by wet etching can potentially transform the fabrication of a variety of optoelectronic device structures including distributed Bragg reflector (DBR) and distributed feedback (DFB) semiconductor lasers, where the surface grating is currently fabricated by dry etching.

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Formation of high aspect ratio GaAs nanostructures with metal-assisted chemical etching

Abstract

Keywords

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