Formation of high aspect ratio GaAs nanostructures with metal-assisted chemical etching

Matt Dejarld, Jae Cheol Shin, Winston Chern, Debashis Chanda, Karthik Balasundaram, John A. Rogers, Xiuling Li

Research output: Contribution to journalArticle

Abstract

Periodic high aspect ratio GaAs nanopillars with widths in the range of 500-1000 nm are produced by metal-assisted chemical etching (MacEtch) using n-type (100) GaAs substrates and Au catalyst films patterned with soft lithography. Depending on the etchant concentration and etching temperature, GaAs nanowires with either vertical or undulating sidewalls are formed with an etch rate of 1-2 μm/min. The realization of high aspect ratio III-V nanostructure arrays by wet etching can potentially transform the fabrication of a variety of optoelectronic device structures including distributed Bragg reflector (DBR) and distributed feedback (DFB) semiconductor lasers, where the surface grating is currently fabricated by dry etching.

Original languageEnglish (US)
Pages (from-to)5259-5263
Number of pages5
JournalNano letters
Volume11
Issue number12
DOIs
StatePublished - Dec 14 2011

Keywords

  • GaAs
  • high aspect ratio
  • MacEtch
  • metal-assisted chemical etching
  • nanopillar
  • Nanowire

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanical Engineering

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  • Cite this

    Dejarld, M., Shin, J. C., Chern, W., Chanda, D., Balasundaram, K., Rogers, J. A., & Li, X. (2011). Formation of high aspect ratio GaAs nanostructures with metal-assisted chemical etching. Nano letters, 11(12), 5259-5263. https://doi.org/10.1021/nl202708d