Focused ion beam (FIB) nanomachining of silicon carbide (SiC) stencil masks for nanoscale patterning

Hamidreza Zamani, Seung Whan Lee, Amir Avishai, Christian A. Zorman, R. Mohan Sankaran, Philip X.L. Feng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This work reports on experimental explorations of using focused ion beam (FIB) nanomachining of silicon carbide (SiC) thin membranes for making robust and high-quality nanostencil masks. We use thin films of polycrystalline SiC (poly-SiC), heteroepitaxial 3C-SiC, and amorphous SiC (a-SiC), prepared by different deposition processes on silicon (Si) substrates, and with thicknesses of t ∼250nm-1.6μm, to make suspended membranes. We have prototyped SiC nanostencil masks with features routinely down to ∼100nm.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials 2011, ICSCRM 2011
EditorsRobert P. Devaty, Michael Dudley, T. Paul Chow, Philip G. Neudeck
PublisherTrans Tech Publications Ltd
Pages889-892
Number of pages4
ISBN (Print)9783037854198
DOIs
StatePublished - 2012
Externally publishedYes
Event14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, United States
Duration: Sep 11 2011Sep 16 2011

Publication series

NameMaterials Science Forum
Volume717-720
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
Country/TerritoryUnited States
CityCleveland, OH
Period9/11/119/16/11

Keywords

  • 3C-SiC
  • Amorphous SiC
  • Focused ion beam (FIB)
  • Membrane
  • Nanolithography
  • Nanoscale patterning
  • Nanoscale stencil mask
  • Poly-SiC
  • Silicon carbide (SiC)

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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