Fluoride-plasma-treated bimodal-gate-oxide ALGaN/GaN MOSHEMT for normally-off operation

Liang Pang, Kyekyoon Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

High-performance enhancement-mode (E-mode) AlGaN / GaN MOSHEMT has been achieved by CF4 plasma treatment and bimodal-gate-oxide deposition scheme. ALD-Al2O3 is utilized to prevent deep F - ion implantation into the 2DEG channel, while sputtered-SiO 2, is employed to suppress the plasma-induced leakage current and increase the gate swing. Compared with the depletion-mode counterpart, thus-fabricated E-mode MOSHEMT exhibited 2.56 V shift in Vth, but only 8% degradation in Imax, demonstrating the promise of the bimodal-gate-oxide scheme for realizing E-mode operation of GaN-based MOSHEMTs.

Original languageEnglish (US)
Title of host publication2013 IEEE Power and Energy Conference at Illinois, PECI 2013
Pages8-12
Number of pages5
DOIs
StatePublished - May 21 2013
Event2013 IEEE Power and Energy Conference at Illinois, PECI 2013 - Champaign, IL, United States
Duration: Feb 22 2013Feb 23 2013

Publication series

Name2013 IEEE Power and Energy Conference at Illinois, PECI 2013

Other

Other2013 IEEE Power and Energy Conference at Illinois, PECI 2013
CountryUnited States
CityChampaign, IL
Period2/22/132/23/13

Keywords

  • AlGaN / GaN MOSHEMT
  • bimodal gate-SiO2
  • enhancement-mode operation
  • fluoride-plasma treatment

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Fuel Technology

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    Pang, L., & Kim, K. (2013). Fluoride-plasma-treated bimodal-gate-oxide ALGaN/GaN MOSHEMT for normally-off operation. In 2013 IEEE Power and Energy Conference at Illinois, PECI 2013 (pp. 8-12). [6506026] (2013 IEEE Power and Energy Conference at Illinois, PECI 2013). https://doi.org/10.1109/PECI.2013.6506026