Fluoride-plasma-treated bimodal-gate-oxide ALGaN/GaN MOSHEMT for normally-off operation

Liang Pang; Kyekyoon Kim

doi:10.1109/PECI.2013.6506026

Fluoride-plasma-treated bimodal-gate-oxide ALGaN/GaN MOSHEMT for normally-off operation

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

High-performance enhancement-mode (E-mode) AlGaN / GaN MOSHEMT has been achieved by CF₄ plasma treatment and bimodal-gate-oxide deposition scheme. ALD-Al₂O₃ is utilized to prevent deep F ^- ion implantation into the 2DEG channel, while sputtered-SiO ₂, is employed to suppress the plasma-induced leakage current and increase the gate swing. Compared with the depletion-mode counterpart, thus-fabricated E-mode MOSHEMT exhibited 2.56 V shift in V_th, but only 8% degradation in I_max, demonstrating the promise of the bimodal-gate-oxide scheme for realizing E-mode operation of GaN-based MOSHEMTs.

Original language	English (US)
Title of host publication	2013 IEEE Power and Energy Conference at Illinois, PECI 2013
Pages	8-12
Number of pages	5
DOIs	https://doi.org/10.1109/PECI.2013.6506026
State	Published - May 21 2013
Event	2013 IEEE Power and Energy Conference at Illinois, PECI 2013 - Champaign, IL, United States Duration: Feb 22 2013 → Feb 23 2013

Publication series

Name	2013 IEEE Power and Energy Conference at Illinois, PECI 2013

Other

Other	2013 IEEE Power and Energy Conference at Illinois, PECI 2013
Country	United States
City	Champaign, IL
Period	2/22/13 → 2/23/13

Keywords

AlGaN / GaN MOSHEMT
bimodal gate-SiO2
enhancement-mode operation
fluoride-plasma treatment

ASJC Scopus subject areas

Energy Engineering and Power Technology
Fuel Technology

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Cite this

Pang, L., & Kim, K. (2013). Fluoride-plasma-treated bimodal-gate-oxide ALGaN/GaN MOSHEMT for normally-off operation. In 2013 IEEE Power and Energy Conference at Illinois, PECI 2013 (pp. 8-12). [6506026] (2013 IEEE Power and Energy Conference at Illinois, PECI 2013). https://doi.org/10.1109/PECI.2013.6506026

Pang, L & Kim, K 2013, Fluoride-plasma-treated bimodal-gate-oxide ALGaN/GaN MOSHEMT for normally-off operation. in 2013 IEEE Power and Energy Conference at Illinois, PECI 2013., 6506026, 2013 IEEE Power and Energy Conference at Illinois, PECI 2013, pp. 8-12, 2013 IEEE Power and Energy Conference at Illinois, PECI 2013, Champaign, IL, United States, 2/22/13. https://doi.org/10.1109/PECI.2013.6506026

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title = "Fluoride-plasma-treated bimodal-gate-oxide ALGaN/GaN MOSHEMT for normally-off operation",

abstract = "High-performance enhancement-mode (E-mode) AlGaN / GaN MOSHEMT has been achieved by CF4 plasma treatment and bimodal-gate-oxide deposition scheme. ALD-Al2O3 is utilized to prevent deep F - ion implantation into the 2DEG channel, while sputtered-SiO 2, is employed to suppress the plasma-induced leakage current and increase the gate swing. Compared with the depletion-mode counterpart, thus-fabricated E-mode MOSHEMT exhibited 2.56 V shift in Vth, but only 8% degradation in Imax, demonstrating the promise of the bimodal-gate-oxide scheme for realizing E-mode operation of GaN-based MOSHEMTs.",

keywords = "AlGaN / GaN MOSHEMT, bimodal gate-SiO2, enhancement-mode operation, fluoride-plasma treatment",

author = "Liang Pang and Kyekyoon Kim",

year = "2013",

month = may,

day = "21",

doi = "10.1109/PECI.2013.6506026",

language = "English (US)",

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series = "2013 IEEE Power and Energy Conference at Illinois, PECI 2013",

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note = "2013 IEEE Power and Energy Conference at Illinois, PECI 2013 ; Conference date: 22-02-2013 Through 23-02-2013",

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N2 - High-performance enhancement-mode (E-mode) AlGaN / GaN MOSHEMT has been achieved by CF4 plasma treatment and bimodal-gate-oxide deposition scheme. ALD-Al2O3 is utilized to prevent deep F - ion implantation into the 2DEG channel, while sputtered-SiO 2, is employed to suppress the plasma-induced leakage current and increase the gate swing. Compared with the depletion-mode counterpart, thus-fabricated E-mode MOSHEMT exhibited 2.56 V shift in Vth, but only 8% degradation in Imax, demonstrating the promise of the bimodal-gate-oxide scheme for realizing E-mode operation of GaN-based MOSHEMTs.

AB - High-performance enhancement-mode (E-mode) AlGaN / GaN MOSHEMT has been achieved by CF4 plasma treatment and bimodal-gate-oxide deposition scheme. ALD-Al2O3 is utilized to prevent deep F - ion implantation into the 2DEG channel, while sputtered-SiO 2, is employed to suppress the plasma-induced leakage current and increase the gate swing. Compared with the depletion-mode counterpart, thus-fabricated E-mode MOSHEMT exhibited 2.56 V shift in Vth, but only 8% degradation in Imax, demonstrating the promise of the bimodal-gate-oxide scheme for realizing E-mode operation of GaN-based MOSHEMTs.

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KW - fluoride-plasma treatment

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