Abstract
High-performance enhancement-mode (E-mode) AlGaN / GaN MOSHEMT has been achieved by CF4 plasma treatment and bimodal-gate-oxide deposition scheme. ALD-Al2O3 is utilized to prevent deep F - ion implantation into the 2DEG channel, while sputtered-SiO 2, is employed to suppress the plasma-induced leakage current and increase the gate swing. Compared with the depletion-mode counterpart, thus-fabricated E-mode MOSHEMT exhibited 2.56 V shift in Vth, but only 8% degradation in Imax, demonstrating the promise of the bimodal-gate-oxide scheme for realizing E-mode operation of GaN-based MOSHEMTs.
| Original language | English (US) |
|---|---|
| Title of host publication | 2013 IEEE Power and Energy Conference at Illinois, PECI 2013 |
| Pages | 8-12 |
| Number of pages | 5 |
| DOIs | |
| State | Published - May 21 2013 |
| Event | 2013 IEEE Power and Energy Conference at Illinois, PECI 2013 - Champaign, IL, United States Duration: Feb 22 2013 → Feb 23 2013 |
Publication series
| Name | 2013 IEEE Power and Energy Conference at Illinois, PECI 2013 |
|---|
Other
| Other | 2013 IEEE Power and Energy Conference at Illinois, PECI 2013 |
|---|---|
| Country | United States |
| City | Champaign, IL |
| Period | 2/22/13 → 2/23/13 |
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Keywords
- AlGaN / GaN MOSHEMT
- bimodal gate-SiO2
- enhancement-mode operation
- fluoride-plasma treatment
ASJC Scopus subject areas
- Energy Engineering and Power Technology
- Fuel Technology
Cite this
Fluoride-plasma-treated bimodal-gate-oxide ALGaN/GaN MOSHEMT for normally-off operation. / Pang, Liang; Kim, Kyekyoon.
2013 IEEE Power and Energy Conference at Illinois, PECI 2013. 2013. p. 8-12 6506026 (2013 IEEE Power and Energy Conference at Illinois, PECI 2013).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Fluoride-plasma-treated bimodal-gate-oxide ALGaN/GaN MOSHEMT for normally-off operation
AU - Pang, Liang
AU - Kim, Kyekyoon
PY - 2013/5/21
Y1 - 2013/5/21
N2 - High-performance enhancement-mode (E-mode) AlGaN / GaN MOSHEMT has been achieved by CF4 plasma treatment and bimodal-gate-oxide deposition scheme. ALD-Al2O3 is utilized to prevent deep F - ion implantation into the 2DEG channel, while sputtered-SiO 2, is employed to suppress the plasma-induced leakage current and increase the gate swing. Compared with the depletion-mode counterpart, thus-fabricated E-mode MOSHEMT exhibited 2.56 V shift in Vth, but only 8% degradation in Imax, demonstrating the promise of the bimodal-gate-oxide scheme for realizing E-mode operation of GaN-based MOSHEMTs.
AB - High-performance enhancement-mode (E-mode) AlGaN / GaN MOSHEMT has been achieved by CF4 plasma treatment and bimodal-gate-oxide deposition scheme. ALD-Al2O3 is utilized to prevent deep F - ion implantation into the 2DEG channel, while sputtered-SiO 2, is employed to suppress the plasma-induced leakage current and increase the gate swing. Compared with the depletion-mode counterpart, thus-fabricated E-mode MOSHEMT exhibited 2.56 V shift in Vth, but only 8% degradation in Imax, demonstrating the promise of the bimodal-gate-oxide scheme for realizing E-mode operation of GaN-based MOSHEMTs.
KW - AlGaN / GaN MOSHEMT
KW - bimodal gate-SiO2
KW - enhancement-mode operation
KW - fluoride-plasma treatment
UR - http://www.scopus.com/inward/record.url?scp=84877803671&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84877803671&partnerID=8YFLogxK
U2 - 10.1109/PECI.2013.6506026
DO - 10.1109/PECI.2013.6506026
M3 - Conference contribution
SN - 9781467356022
T3 - 2013 IEEE Power and Energy Conference at Illinois, PECI 2013
SP - 8
EP - 12
BT - 2013 IEEE Power and Energy Conference at Illinois, PECI 2013
ER -