Fluidic measurement of electric field sensitivity of Ti-GaAs Schottky junction gated field effect biosensors

Woo Jin Chang, Ho Jun Suk, A. K M Newaz, Kirk D. Wallace, Samuel A. Wickline, Stuart A. Solin, Rashid Bashir

Research output: Contribution to journalArticle

Abstract

We report the electric field and pH sensitivity of fluid gated metal-semiconductor hybrid (MSH) Schottky structures consisting of a Titanium layer on n-type GaAs. Compared to standard field-effect sensors, the MSH Schottky structures are 21 times more sensitive to electric field of -46.6 V/cm and show about six times larger resistance change as pH of the solution is decreased from 8.17 to 5.54. The potential change at the fluidic gate and passivation layer interface by bias voltages and pH are mirrored by the metal shunt, resulting in larger depletion widths under the Schottky junction and resistance change as compared to sensors with no Schottky junction. 2D numerical simulation results are in good agreement with the measured data and suggest thinner mesa with lower doping density can further increase device sensitivity.

Original languageEnglish (US)
Pages (from-to)849-854
Number of pages6
JournalBiomedical microdevices
Volume12
Issue number5
DOIs
StatePublished - Oct 1 2010

Fingerprint

Fluidics
Biosensing Techniques
Biosensors
Semiconductors
Metals
Electric fields
Semiconductor materials
Sensors
Bias voltage
Titanium
Passivation
Doping (additives)
Equipment and Supplies
Fluids
Computer simulation
gallium arsenide

Keywords

  • Electric field sensing
  • Field effect biosensor
  • Fluidic measurement
  • Schottky junction

ASJC Scopus subject areas

  • Biomedical Engineering
  • Molecular Biology

Cite this

Fluidic measurement of electric field sensitivity of Ti-GaAs Schottky junction gated field effect biosensors. / Chang, Woo Jin; Suk, Ho Jun; Newaz, A. K M; Wallace, Kirk D.; Wickline, Samuel A.; Solin, Stuart A.; Bashir, Rashid.

In: Biomedical microdevices, Vol. 12, No. 5, 01.10.2010, p. 849-854.

Research output: Contribution to journalArticle

Chang, Woo Jin ; Suk, Ho Jun ; Newaz, A. K M ; Wallace, Kirk D. ; Wickline, Samuel A. ; Solin, Stuart A. ; Bashir, Rashid. / Fluidic measurement of electric field sensitivity of Ti-GaAs Schottky junction gated field effect biosensors. In: Biomedical microdevices. 2010 ; Vol. 12, No. 5. pp. 849-854.
@article{b12862f5a6814b52b05ce84ce8a818d4,
title = "Fluidic measurement of electric field sensitivity of Ti-GaAs Schottky junction gated field effect biosensors",
abstract = "We report the electric field and pH sensitivity of fluid gated metal-semiconductor hybrid (MSH) Schottky structures consisting of a Titanium layer on n-type GaAs. Compared to standard field-effect sensors, the MSH Schottky structures are 21 times more sensitive to electric field of -46.6 V/cm and show about six times larger resistance change as pH of the solution is decreased from 8.17 to 5.54. The potential change at the fluidic gate and passivation layer interface by bias voltages and pH are mirrored by the metal shunt, resulting in larger depletion widths under the Schottky junction and resistance change as compared to sensors with no Schottky junction. 2D numerical simulation results are in good agreement with the measured data and suggest thinner mesa with lower doping density can further increase device sensitivity.",
keywords = "Electric field sensing, Field effect biosensor, Fluidic measurement, Schottky junction",
author = "Chang, {Woo Jin} and Suk, {Ho Jun} and Newaz, {A. K M} and Wallace, {Kirk D.} and Wickline, {Samuel A.} and Solin, {Stuart A.} and Rashid Bashir",
year = "2010",
month = "10",
day = "1",
doi = "10.1007/s10544-010-9439-9",
language = "English (US)",
volume = "12",
pages = "849--854",
journal = "Biomedical Microdevices",
issn = "1387-2176",
publisher = "Kluwer Academic Publishers",
number = "5",

}

TY - JOUR

T1 - Fluidic measurement of electric field sensitivity of Ti-GaAs Schottky junction gated field effect biosensors

AU - Chang, Woo Jin

AU - Suk, Ho Jun

AU - Newaz, A. K M

AU - Wallace, Kirk D.

AU - Wickline, Samuel A.

AU - Solin, Stuart A.

AU - Bashir, Rashid

PY - 2010/10/1

Y1 - 2010/10/1

N2 - We report the electric field and pH sensitivity of fluid gated metal-semiconductor hybrid (MSH) Schottky structures consisting of a Titanium layer on n-type GaAs. Compared to standard field-effect sensors, the MSH Schottky structures are 21 times more sensitive to electric field of -46.6 V/cm and show about six times larger resistance change as pH of the solution is decreased from 8.17 to 5.54. The potential change at the fluidic gate and passivation layer interface by bias voltages and pH are mirrored by the metal shunt, resulting in larger depletion widths under the Schottky junction and resistance change as compared to sensors with no Schottky junction. 2D numerical simulation results are in good agreement with the measured data and suggest thinner mesa with lower doping density can further increase device sensitivity.

AB - We report the electric field and pH sensitivity of fluid gated metal-semiconductor hybrid (MSH) Schottky structures consisting of a Titanium layer on n-type GaAs. Compared to standard field-effect sensors, the MSH Schottky structures are 21 times more sensitive to electric field of -46.6 V/cm and show about six times larger resistance change as pH of the solution is decreased from 8.17 to 5.54. The potential change at the fluidic gate and passivation layer interface by bias voltages and pH are mirrored by the metal shunt, resulting in larger depletion widths under the Schottky junction and resistance change as compared to sensors with no Schottky junction. 2D numerical simulation results are in good agreement with the measured data and suggest thinner mesa with lower doping density can further increase device sensitivity.

KW - Electric field sensing

KW - Field effect biosensor

KW - Fluidic measurement

KW - Schottky junction

UR - http://www.scopus.com/inward/record.url?scp=78049300900&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78049300900&partnerID=8YFLogxK

U2 - 10.1007/s10544-010-9439-9

DO - 10.1007/s10544-010-9439-9

M3 - Article

C2 - 20544389

AN - SCOPUS:78049300900

VL - 12

SP - 849

EP - 854

JO - Biomedical Microdevices

JF - Biomedical Microdevices

SN - 1387-2176

IS - 5

ER -