Fission gas transport and its interactions with irradiation-induced defects in lanthanum doped ceria

D. Yun, B. Ye, A. J. Oaks, W. Chen, M. A. Kirk, J. Rest, A. M. Yacout, J. F. Stubbins

Research output: Contribution to journalArticle

Abstract

To help understand the mechanisms of irradiation-induced defect formation and evolution in nuclear fuel, systematic experimental efforts have been carried out. Ceria (CeO 2) was selected as a surrogate material for Uranium Dioxide (UO 2) due to many similar properties. Lanthanum (La) was chosen as a dopant in CeO 2 to investigate the effect of impurities. The presence of La in the CeO 2 lattice introduces a predictable initial concentration of oxygen vacancies, making it possible to characterize hypostoichiometric effects in CeO 2. The influence of two La concentrations, 5% and 25%, were examined. In situ Transmission Electron Microscopy (TEM) experiments were used to study the evolution of defect clusters and the influence of irradiation with two common fission products: Xe and Kr. The irradiations were performed on thin film, single crystal materials. The irradiation damage caused formation of dislocation loopsat 600 °C and defect clusters at room temperature. Dislocation networks form as the result of interactions of defect clusters. The dislocation loops were determined to be mainly of 1/9[1 1 1] interstitial type loops. Quantitative results were obtained to characterize the fluence and temperature effects of irradiation. Slow defect kinetics were found with irradiation on 25% La doped CeO 2 at 600 °C and it is attributed to the higher concentration of oxygen vacancies due to high La dopant level.

Original languageEnglish (US)
Pages (from-to)239-243
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume272
DOIs
StatePublished - Feb 1 2012

Keywords

  • CeO
  • Ex situ TEM
  • In situ TEM
  • Irradiation-induced defect
  • Kr ion irradiation
  • Lanthanum
  • Xe

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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