TY - GEN
T1 - First-principle SiPM Characterization to Enable Radiation Detection in Harsh Environments
AU - Fritchie, Jacob
AU - Fang, Ming
AU - Balajthy, Jon
AU - Sweany, Melinda
AU - Weber, Thomas
AU - Di Fulvio, Angela
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - This paper reports the experimental comparison of two silicon photomultipliers (SiPMs): the MicroFJ-30035 by ONSemi and the ASD-NUV3S-P by AdvanSiD, in terms of gain, dark count rate, and crosstalk probability. SiPMs are solid state photon detectors that enable high sensitivity light readout. They have low-voltage power requirements, small form factor, and are durable. For these reasons, they are being considered as replacements for vacuum photomultiplier tubes in some applications. However, their performance relies on several parameters, which need to be carefully characterized to enable their high-fidelity simulation and SiPM-based design of devices capable to operate in harsh environments. The parameters tend to vary between manufacturers and processing technologies. In this work, we have compared the MicroFJ and ASD SiPMs in terms of gain, dark count rate, and crosstalk probability. We found that the dark count rate of the MicroFJ was 16% higher than the ASD. Also, the gain of the MicroFJ is 3.5 times higher than the ASD. Finally, the crosstalk probability of the ASD 1.96 times higher than the MicroFJ. Our findings are in good agreement with manufacturer reported values.
AB - This paper reports the experimental comparison of two silicon photomultipliers (SiPMs): the MicroFJ-30035 by ONSemi and the ASD-NUV3S-P by AdvanSiD, in terms of gain, dark count rate, and crosstalk probability. SiPMs are solid state photon detectors that enable high sensitivity light readout. They have low-voltage power requirements, small form factor, and are durable. For these reasons, they are being considered as replacements for vacuum photomultiplier tubes in some applications. However, their performance relies on several parameters, which need to be carefully characterized to enable their high-fidelity simulation and SiPM-based design of devices capable to operate in harsh environments. The parameters tend to vary between manufacturers and processing technologies. In this work, we have compared the MicroFJ and ASD SiPMs in terms of gain, dark count rate, and crosstalk probability. We found that the dark count rate of the MicroFJ was 16% higher than the ASD. Also, the gain of the MicroFJ is 3.5 times higher than the ASD. Finally, the crosstalk probability of the ASD 1.96 times higher than the MicroFJ. Our findings are in good agreement with manufacturer reported values.
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U2 - 10.1109/NSS/MIC44845.2022.10399147
DO - 10.1109/NSS/MIC44845.2022.10399147
M3 - Conference contribution
AN - SCOPUS:85185386682
T3 - 2022 IEEE NSS/MIC RTSD - IEEE Nuclear Science Symposium, Medical Imaging Conference and Room Temperature Semiconductor Detector Conference
BT - 2022 IEEE NSS/MIC RTSD - IEEE Nuclear Science Symposium, Medical Imaging Conference and Room Temperature Semiconductor Detector Conference
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2022 IEEE Nuclear Science Symposium, Medical Imaging Conference, and Room Temperature Semiconductor Detector Conference, IEEE NSS MIC RTSD 2022
Y2 - 5 November 2022 through 12 November 2022
ER -