Finding defects in a 22 nm node wafer with visible light

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Despite a diffraction limited lateral resolution of 360 nm, we detected 20 nm by 110 nm defects in a patterned 22 nm node wafer using quantitative phase and amplitude images from epi-illumination diffraction phase microscopy.

Original languageEnglish (US)
Title of host publicationCLEO
Subtitle of host publicationScience and Innovations, CLEO_SI 2013
StatePublished - Nov 18 2013
EventCLEO: Science and Innovations, CLEO_SI 2013 - San Jose, CA, United States
Duration: Jun 9 2013Jun 14 2013

Publication series

NameCLEO: Science and Innovations, CLEO_SI 2013

Other

OtherCLEO: Science and Innovations, CLEO_SI 2013
CountryUnited States
CitySan Jose, CA
Period6/9/136/14/13

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ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

Cite this

Zhou, R., Popescu, G., & Goddard, L. L. (2013). Finding defects in a 22 nm node wafer with visible light. In CLEO: Science and Innovations, CLEO_SI 2013 (CLEO: Science and Innovations, CLEO_SI 2013).