Finding defects in a 22 nm node wafer with visible light

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Despite a diffraction limited lateral resolution of 360 nm, we detected 20 nm by 110 nm defects in a patterned 22 nm node wafer using quantitative phase and amplitude images from epiillumination diffraction phase microscopy.

Original languageEnglish (US)
Title of host publication2013 Conference on Lasers and Electro-Optics, CLEO 2013
PublisherIEEE Computer Society
ISBN (Print)9781557529725
DOIs
StatePublished - Jan 1 2013
Event2013 Conference on Lasers and Electro-Optics, CLEO 2013 - San Jose, CA, United States
Duration: Jun 9 2013Jun 14 2013

Publication series

Name2013 Conference on Lasers and Electro-Optics, CLEO 2013

Other

Other2013 Conference on Lasers and Electro-Optics, CLEO 2013
CountryUnited States
CitySan Jose, CA
Period6/9/136/14/13

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'Finding defects in a 22 nm node wafer with visible light'. Together they form a unique fingerprint.

  • Cite this

    Zhou, R., Popescu, G., & Goddard, L. L. (2013). Finding defects in a 22 nm node wafer with visible light. In 2013 Conference on Lasers and Electro-Optics, CLEO 2013 [6832945] (2013 Conference on Lasers and Electro-Optics, CLEO 2013). IEEE Computer Society. https://doi.org/10.1364/cleo_at.2013.af2j.2