The authors report field emission from nanometer-sharp tips of polarized PbZrxTi1-xO3 (PZT), silicon, and platinum. The PZT nanoemitters are fabricated in a batch fabrication process from single-crystal silicon tips that are coated with a 30 nm thick film of crystalline PZT. The nanoemitters start to emit electrons at fields as low as 2 V/μm and reach threshold emission, or turn-on, at fields as low as 3.9 V/μm. The turn-on field is 3.9 V/μm for PbZr0.2Ti 0.8O3, 6.8 V/μm for PbZr0.52Ti 0.48O3, and 10.75 V/μm for PbZr0.8Ti 0.2O3. The silicon nanoemitters have an electron emission turn-on field of 7.2 V/μm, and the platinum nanoemitters have an electron emission turn-on field of 5.75 V/μm. Using a Fowler-Nordheim analysis, the calculated effective work function of the PbZr0.2Ti 0.8O3 film is 1.00 eV, and the field amplification factor is ∼1526.

Original languageEnglish (US)
Article number021805
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Issue number2
StatePublished - Mar 2013

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry


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