Field emission from nanometer-scale tips of crystalline PbZr xTi1-xO3

Patrick C. Fletcher; Vengadesh Kumara R. Mangalam; Lane W. Martin; William P. King

doi:10.1116/1.4793219

Field emission from nanometer-scale tips of crystalline PbZr _xTi_1-xO₃

Patrick C. Fletcher, Vengadesh Kumara R. Mangalam, Lane W. Martin, William P. King

Research output: Contribution to journal › Article › peer-review

Abstract

The authors report field emission from nanometer-sharp tips of polarized PbZr_xTi_1-xO₃ (PZT), silicon, and platinum. The PZT nanoemitters are fabricated in a batch fabrication process from single-crystal silicon tips that are coated with a 30 nm thick film of crystalline PZT. The nanoemitters start to emit electrons at fields as low as 2 V/μm and reach threshold emission, or turn-on, at fields as low as 3.9 V/μm. The turn-on field is 3.9 V/μm for PbZr_0.2Ti _0.8O₃, 6.8 V/μm for PbZr_0.52Ti _0.48O₃, and 10.75 V/μm for PbZr_0.8Ti _0.2O₃. The silicon nanoemitters have an electron emission turn-on field of 7.2 V/μm, and the platinum nanoemitters have an electron emission turn-on field of 5.75 V/μm. Using a Fowler-Nordheim analysis, the calculated effective work function of the PbZr_0.2Ti _0.8O₃ film is 1.00 eV, and the field amplification factor is ∼1526.

Original language	English (US)
Article number	021805
Journal	Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume	31
Issue number	2
DOIs	https://doi.org/10.1116/1.4793219
State	Published - Mar 2013

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Process Chemistry and Technology
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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10.1116/1.4793219

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@article{3c20f265155b40bcbc0d927eca3c37bb,

title = "Field emission from nanometer-scale tips of crystalline PbZr xTi1-xO3",

abstract = "The authors report field emission from nanometer-sharp tips of polarized PbZrxTi1-xO3 (PZT), silicon, and platinum. The PZT nanoemitters are fabricated in a batch fabrication process from single-crystal silicon tips that are coated with a 30 nm thick film of crystalline PZT. The nanoemitters start to emit electrons at fields as low as 2 V/μm and reach threshold emission, or turn-on, at fields as low as 3.9 V/μm. The turn-on field is 3.9 V/μm for PbZr0.2Ti 0.8O3, 6.8 V/μm for PbZr0.52Ti 0.48O3, and 10.75 V/μm for PbZr0.8Ti 0.2O3. The silicon nanoemitters have an electron emission turn-on field of 7.2 V/μm, and the platinum nanoemitters have an electron emission turn-on field of 5.75 V/μm. Using a Fowler-Nordheim analysis, the calculated effective work function of the PbZr0.2Ti 0.8O3 film is 1.00 eV, and the field amplification factor is ∼1526.",

author = "Fletcher, {Patrick C.} and Mangalam, {Vengadesh Kumara R.} and Martin, {Lane W.} and King, {William P.}",

note = "Funding Information: This work was supported by the DARPA AXIS program under Grant No. N66001-11-1-4195. Portions of this work were performed in the Materials Research Laboratory Central Facilities, University of Illinois.",

year = "2013",

month = mar,

doi = "10.1116/1.4793219",

language = "English (US)",

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journal = "Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics",

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T1 - Field emission from nanometer-scale tips of crystalline PbZr xTi1-xO3

AU - Fletcher, Patrick C.

AU - Mangalam, Vengadesh Kumara R.

AU - Martin, Lane W.

AU - King, William P.

N1 - Funding Information: This work was supported by the DARPA AXIS program under Grant No. N66001-11-1-4195. Portions of this work were performed in the Materials Research Laboratory Central Facilities, University of Illinois.

PY - 2013/3

Y1 - 2013/3

N2 - The authors report field emission from nanometer-sharp tips of polarized PbZrxTi1-xO3 (PZT), silicon, and platinum. The PZT nanoemitters are fabricated in a batch fabrication process from single-crystal silicon tips that are coated with a 30 nm thick film of crystalline PZT. The nanoemitters start to emit electrons at fields as low as 2 V/μm and reach threshold emission, or turn-on, at fields as low as 3.9 V/μm. The turn-on field is 3.9 V/μm for PbZr0.2Ti 0.8O3, 6.8 V/μm for PbZr0.52Ti 0.48O3, and 10.75 V/μm for PbZr0.8Ti 0.2O3. The silicon nanoemitters have an electron emission turn-on field of 7.2 V/μm, and the platinum nanoemitters have an electron emission turn-on field of 5.75 V/μm. Using a Fowler-Nordheim analysis, the calculated effective work function of the PbZr0.2Ti 0.8O3 film is 1.00 eV, and the field amplification factor is ∼1526.

AB - The authors report field emission from nanometer-sharp tips of polarized PbZrxTi1-xO3 (PZT), silicon, and platinum. The PZT nanoemitters are fabricated in a batch fabrication process from single-crystal silicon tips that are coated with a 30 nm thick film of crystalline PZT. The nanoemitters start to emit electrons at fields as low as 2 V/μm and reach threshold emission, or turn-on, at fields as low as 3.9 V/μm. The turn-on field is 3.9 V/μm for PbZr0.2Ti 0.8O3, 6.8 V/μm for PbZr0.52Ti 0.48O3, and 10.75 V/μm for PbZr0.8Ti 0.2O3. The silicon nanoemitters have an electron emission turn-on field of 7.2 V/μm, and the platinum nanoemitters have an electron emission turn-on field of 5.75 V/μm. Using a Fowler-Nordheim analysis, the calculated effective work function of the PbZr0.2Ti 0.8O3 film is 1.00 eV, and the field amplification factor is ∼1526.

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