Field emission characteristics of vertically aligned free-standing copper nanowires grown by chemical vapor deposition with no template

Wenhua Gu, Sangho Lim, Ju Gao, Hyungsoo Choi, Kyekyoon Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Field emission from vertically aligned free-standing copper nanowires (CuNWs) is reported. The CuNWs were grown by chemical vapor deposition on various substrates without using templates, catalysts or lithographic processes. The nanowires exhibited excellent field emission characteristics that are comparable to carbon nanotubes and other nanowires, and are substantially superior to those CuNWs prepared by template method. Different substrates, electrode distances and pressures were tested. Low turn-on fields and high field-enhancement factors were obtained of the emitters and their robustness and long-term stability demonstrated. These results suggest that the present CuNWs may serve as viable emitters for practical applications.

Original languageEnglish (US)
Title of host publication2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages194-195
Number of pages2
DOIs
StatePublished - Dec 1 2006
Event2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of
Duration: Oct 22 2006Oct 25 2006

Publication series

Name2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Volume1

Other

Other2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
CountryKorea, Republic of
CityGyeongju
Period10/22/0610/25/06

Fingerprint

Field emission
Nanowires
Copper
Chemical vapor deposition
Carbon Nanotubes
Substrates
Carbon nanotubes
Electrodes
Catalysts

Keywords

  • CuNW
  • CVD
  • Field emission

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)

Cite this

Gu, W., Lim, S., Gao, J., Choi, H., & Kim, K. (2006). Field emission characteristics of vertically aligned free-standing copper nanowires grown by chemical vapor deposition with no template. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC (pp. 194-195). [4388739] (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1). https://doi.org/10.1109/NMDC.2006.4388739

Field emission characteristics of vertically aligned free-standing copper nanowires grown by chemical vapor deposition with no template. / Gu, Wenhua; Lim, Sangho; Gao, Ju; Choi, Hyungsoo; Kim, Kyekyoon.

2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. 2006. p. 194-195 4388739 (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gu, W, Lim, S, Gao, J, Choi, H & Kim, K 2006, Field emission characteristics of vertically aligned free-standing copper nanowires grown by chemical vapor deposition with no template. in 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC., 4388739, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, vol. 1, pp. 194-195, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, Gyeongju, Korea, Republic of, 10/22/06. https://doi.org/10.1109/NMDC.2006.4388739
Gu W, Lim S, Gao J, Choi H, Kim K. Field emission characteristics of vertically aligned free-standing copper nanowires grown by chemical vapor deposition with no template. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. 2006. p. 194-195. 4388739. (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC). https://doi.org/10.1109/NMDC.2006.4388739
Gu, Wenhua ; Lim, Sangho ; Gao, Ju ; Choi, Hyungsoo ; Kim, Kyekyoon. / Field emission characteristics of vertically aligned free-standing copper nanowires grown by chemical vapor deposition with no template. 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. 2006. pp. 194-195 (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC).
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