Abstract
A field effect transistor structure comprises a source and a drain on a substrate, and a stack of n vertically separated channel nanowires isolated from the substrate and connecting the source and the drain, where n is an integer and 2≦n≦20. The channel nanowires collectively comprise at least two different thicknesses and/or at least two different dopant concentrations and/or at least two different semiconductor materials.
Original language | English (US) |
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U.S. patent number | 9224809 |
Filing date | 5/17/13 |
State | Published - Dec 29 2015 |