Abstract

A field effect transistor structure comprises a source and a drain on a substrate, and a stack of n vertically separated channel nanowires isolated from the substrate and connecting the source and the drain, where n is an integer and 2≦n≦20. The channel nanowires collectively comprise at least two different thicknesses and/or at least two different dopant concentrations and/or at least two different semiconductor materials.
Original languageEnglish (US)
U.S. patent number9224809
Filing date5/17/13
StatePublished - Dec 29 2015

Fingerprint

Dive into the research topics of 'Field effect transistor structure comprising a stack of vertically separated channel nanowires'. Together they form a unique fingerprint.

Cite this